Normal temperature pretreatment method for electroplating chip multilayer ceramic capacitor

The invention discloses a normal temperature pretreatment method for electroplating a chip multilayer ceramic capacitor. The pretreatment method comprises the following steps: before entering into an electro-nickeling procedure, under a normal temperature condition, using sulfamic acid to treat the...

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Bibliographische Detailangaben
Hauptverfasser: SONG XIAN'GANG, LOU HONGTAO, LIANG JUNZHAN, TAN RUQUAN
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:The invention discloses a normal temperature pretreatment method for electroplating a chip multilayer ceramic capacitor. The pretreatment method comprises the following steps: before entering into an electro-nickeling procedure, under a normal temperature condition, using sulfamic acid to treat the chip multilayer ceramic capacitor. According to the normal temperature pretreatment method disclosed by the invention, a novel pretreatment formula is used to pretreat the chip multilayer ceramic capacitor, so that the technological process of the pretreatment for electroplating the chip multilayer ceramic capacitor can be simplified, a heating device is not required to be used, and the pretreatment working procedure for electroplating the chip multilayer ceramic capacitor can be more convenient and faster.