Compound semiconductor substrate, semiconductor device, and processes for producing them

The invention provides a compound semiconductor substrate, a semiconductor device, and processes for producing them. The compound semiconductor substrate 10 according to the present invention is comprised of a Group III nitride and has a surface layer 12 containing a chloride of not less than 200101...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	KEIJI ISHIBASHI, FUMITAKE NAKANISHI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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