Gate oxide growth method

The invention discloses a gate oxide growth method. The method comprises the following steps: placing a wafer needing gate oxide growth in a reaction chamber, introducing oxygen to enable the wafer to be arranged in an oxygen atmosphere, and then increasing the temperature of the wafer until the temperature rises to a technical temperature; maintaining the temperature at the technical temperature and maintaining introduction of the oxygen, and starting introducing DCE to enable the wafer to be arranged in an oxygen and DCE mixed atmosphere; maintaining the temperature at the technical temperature and maintaining the introduction of the oxygen and the DCE, and starting introducing hydrogen until the gate oxide growth is completed; and closing the introduction of the DCE, the hydrogen and the oxygen, and starting introducing nitrogen until the temperature of the wafer is reduced to a non-technical temperature. According to such a gate oxide growth method, the gas DCE containing C1 is added, and in the step of the gate oxide growth, the C1 generated by the DCE due to thermal oxidization plays the role of a catalyst for reaction between O and Si, such that the oxidation rate is greatly improved. The gate oxide growth method is higher in production efficiency compared to a conventional dry-method oxidation process.