Semiconductor device and method for producing same

A plurality of electric-power-controlling semiconductor elements are formed on a semiconductor substrate; in intersecting regions where band-shaped dicing regions, which partition adjacent semiconductor elements, intersect with one another, a stress relaxation resin layer (7) covering the intersecting regions is formed; and the semiconductor elements are separated into individual pieces by dicing the intersecting regions and cutting the stress relaxation resin layer (7). Thus, it is possible to obtain a semiconductor device that has high adhesive strength with respect to a sealing resin even in semiconductor elements using a compound semiconductor substrate such as SiC, and that is less likely to cause cracking and peeling of the sealing resin due to thermal stress at the time of operation.