Thin film transistor and display array substrate using same
The invention provides a thin film transistor. The thin film transistor includes the following components of: a gate; an gate insulating layer covering the gate; a channel layer which is arranged on the gate insulating layer and is corresponding to the gate; an etching barrier layer which covers the...
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| creator | ZHANG WEICHI WU YIYU LU YIMIN FANG GUOLONG GAO YIQUN LIN HUIJU |
| description | The invention provides a thin film transistor. The thin film transistor includes the following components of: a gate; an gate insulating layer covering the gate; a channel layer which is arranged on the gate insulating layer and is corresponding to the gate; an etching barrier layer which covers the channel layer and at least comprises one organic barrier layer and a hard mask layer arranged on the organic barrier layer in a layer-upon-layer manner, wherein the organic barrier layer is a cured transparent organic material layer, and the hard mask layer is formed on the surface of the organic barrier layer and is used for enhancing the hardness of the organic barrier layer, wherein the surface of the organic barrier layer faces a direction opposite to the channel layer; two contact holes which pass through the etching barrier layer; as well as a source and a drain which are connected with the channel layer through the two contact holes. The invention also provides a display array substrate using the thin film transistor. |
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The thin film transistor includes the following components of: a gate; an gate insulating layer covering the gate; a channel layer which is arranged on the gate insulating layer and is corresponding to the gate; an etching barrier layer which covers the channel layer and at least comprises one organic barrier layer and a hard mask layer arranged on the organic barrier layer in a layer-upon-layer manner, wherein the organic barrier layer is a cured transparent organic material layer, and the hard mask layer is formed on the surface of the organic barrier layer and is used for enhancing the hardness of the organic barrier layer, wherein the surface of the organic barrier layer faces a direction opposite to the channel layer; two contact holes which pass through the etching barrier layer; as well as a source and a drain which are connected with the channel layer through the two contact holes. The invention also provides a display array substrate using the thin film transistor.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2015</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20150318&DB=EPODOC&CC=CN&NR=104425621A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20150318&DB=EPODOC&CC=CN&NR=104425621A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ZHANG WEICHI</creatorcontrib><creatorcontrib>WU YIYU</creatorcontrib><creatorcontrib>LU YIMIN</creatorcontrib><creatorcontrib>FANG GUOLONG</creatorcontrib><creatorcontrib>GAO YIQUN</creatorcontrib><creatorcontrib>LIN HUIJU</creatorcontrib><title>Thin film transistor and display array substrate using same</title><description>The invention provides a thin film transistor. The thin film transistor includes the following components of: a gate; an gate insulating layer covering the gate; a channel layer which is arranged on the gate insulating layer and is corresponding to the gate; an etching barrier layer which covers the channel layer and at least comprises one organic barrier layer and a hard mask layer arranged on the organic barrier layer in a layer-upon-layer manner, wherein the organic barrier layer is a cured transparent organic material layer, and the hard mask layer is formed on the surface of the organic barrier layer and is used for enhancing the hardness of the organic barrier layer, wherein the surface of the organic barrier layer faces a direction opposite to the channel layer; two contact holes which pass through the etching barrier layer; as well as a source and a drain which are connected with the channel layer through the two contact holes. 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The thin film transistor includes the following components of: a gate; an gate insulating layer covering the gate; a channel layer which is arranged on the gate insulating layer and is corresponding to the gate; an etching barrier layer which covers the channel layer and at least comprises one organic barrier layer and a hard mask layer arranged on the organic barrier layer in a layer-upon-layer manner, wherein the organic barrier layer is a cured transparent organic material layer, and the hard mask layer is formed on the surface of the organic barrier layer and is used for enhancing the hardness of the organic barrier layer, wherein the surface of the organic barrier layer faces a direction opposite to the channel layer; two contact holes which pass through the etching barrier layer; as well as a source and a drain which are connected with the channel layer through the two contact holes. The invention also provides a display array substrate using the thin film transistor.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Thin film transistor and display array substrate using same |
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