METHOD OF CHEMICAL MECHANICAL POLISHING A SUBSTRATE
A method of chemical mechanical polishing a substrate is provided, including: providing a substrate; providing a chemical mechanical polishing pad, comprising: a polishing layer having a composition and a polishing surface, wherein the composition of polishing layer is selected to exhibit an initial...
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| creator | HENDRON JEFFREY JAMES NOWLAND JOHN G VAN HANEHEM MATTHEW RICHARD MURNANE JAMES DEGROOT MARTY W STRING DARRELL JENSEN MICHELLE YEH FENGJI ISLAM MOHAMMAD T QIAN BAINIAN |
| description | A method of chemical mechanical polishing a substrate is provided, including: providing a substrate; providing a chemical mechanical polishing pad, comprising: a polishing layer having a composition and a polishing surface, wherein the composition of polishing layer is selected to exhibit an initial hydrolytic stability; coupled with a sustained hydrolytic instability; a rigid layer having a top surface and a bottom surface; a hot melt adhesive interposed between the base surface of the polishing layer and the top surface of the rigid layer; wherein the hot melt adhesive bonds the polishing layer to the rigid layer; a pressure sensitive platen adhesive layer having a stack side and a platen side; wherein the stack side of the pressure sensitive platen adhesive layer is adjacent to the bottom surface of the rigid layer; and, creating dynamic contact between the polishing surface and substrate to polish a surface of the substrate. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN104416453A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN104416453A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN104416453A3</originalsourceid><addsrcrecordid>eNrjZDD2dQ3x8HdR8HdTcPZw9fV0dvRR8HV19nD0AzMD_H08gz08_dwVHBWCQ52CQ4IcQ1x5GFjTEnOKU3mhNDeDoptriLOHbmpBfnxqcUFicmpeakm8s5-hgYmJoZmJqbGjMTFqAH0PJs4</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>METHOD OF CHEMICAL MECHANICAL POLISHING A SUBSTRATE</title><source>esp@cenet</source><creator>HENDRON JEFFREY JAMES ; NOWLAND JOHN G ; VAN HANEHEM MATTHEW RICHARD ; MURNANE JAMES ; DEGROOT MARTY W ; STRING DARRELL ; JENSEN MICHELLE ; YEH FENGJI ; ISLAM MOHAMMAD T ; QIAN BAINIAN</creator><creatorcontrib>HENDRON JEFFREY JAMES ; NOWLAND JOHN G ; VAN HANEHEM MATTHEW RICHARD ; MURNANE JAMES ; DEGROOT MARTY W ; STRING DARRELL ; JENSEN MICHELLE ; YEH FENGJI ; ISLAM MOHAMMAD T ; QIAN BAINIAN</creatorcontrib><description>A method of chemical mechanical polishing a substrate is provided, including: providing a substrate; providing a chemical mechanical polishing pad, comprising: a polishing layer having a composition and a polishing surface, wherein the composition of polishing layer is selected to exhibit an initial hydrolytic stability; coupled with a sustained hydrolytic instability; a rigid layer having a top surface and a bottom surface; a hot melt adhesive interposed between the base surface of the polishing layer and the top surface of the rigid layer; wherein the hot melt adhesive bonds the polishing layer to the rigid layer; a pressure sensitive platen adhesive layer having a stack side and a platen side; wherein the stack side of the pressure sensitive platen adhesive layer is adjacent to the bottom surface of the rigid layer; and, creating dynamic contact between the polishing surface and substrate to polish a surface of the substrate.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; COMPOSITIONS BASED THEREON ; DRESSING OR CONDITIONING OF ABRADING SURFACES ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS ; GRINDING ; MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING ; MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS ; METALLURGY ; ORGANIC MACROMOLECULAR COMPOUNDS ; PERFORMING OPERATIONS ; POLISHING ; SEMICONDUCTOR DEVICES ; THEIR PREPARATION OR CHEMICAL WORKING-UP ; TRANSPORTING</subject><creationdate>2015</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20150318&DB=EPODOC&CC=CN&NR=104416453A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20150318&DB=EPODOC&CC=CN&NR=104416453A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HENDRON JEFFREY JAMES</creatorcontrib><creatorcontrib>NOWLAND JOHN G</creatorcontrib><creatorcontrib>VAN HANEHEM MATTHEW RICHARD</creatorcontrib><creatorcontrib>MURNANE JAMES</creatorcontrib><creatorcontrib>DEGROOT MARTY W</creatorcontrib><creatorcontrib>STRING DARRELL</creatorcontrib><creatorcontrib>JENSEN MICHELLE</creatorcontrib><creatorcontrib>YEH FENGJI</creatorcontrib><creatorcontrib>ISLAM MOHAMMAD T</creatorcontrib><creatorcontrib>QIAN BAINIAN</creatorcontrib><title>METHOD OF CHEMICAL MECHANICAL POLISHING A SUBSTRATE</title><description>A method of chemical mechanical polishing a substrate is provided, including: providing a substrate; providing a chemical mechanical polishing pad, comprising: a polishing layer having a composition and a polishing surface, wherein the composition of polishing layer is selected to exhibit an initial hydrolytic stability; coupled with a sustained hydrolytic instability; a rigid layer having a top surface and a bottom surface; a hot melt adhesive interposed between the base surface of the polishing layer and the top surface of the rigid layer; wherein the hot melt adhesive bonds the polishing layer to the rigid layer; a pressure sensitive platen adhesive layer having a stack side and a platen side; wherein the stack side of the pressure sensitive platen adhesive layer is adjacent to the bottom surface of the rigid layer; and, creating dynamic contact between the polishing surface and substrate to polish a surface of the substrate.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMISTRY</subject><subject>COMPOSITIONS BASED THEREON</subject><subject>DRESSING OR CONDITIONING OF ABRADING SURFACES</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS</subject><subject>GRINDING</subject><subject>MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING</subject><subject>MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS</subject><subject>METALLURGY</subject><subject>ORGANIC MACROMOLECULAR COMPOUNDS</subject><subject>PERFORMING OPERATIONS</subject><subject>POLISHING</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>THEIR PREPARATION OR CHEMICAL WORKING-UP</subject><subject>TRANSPORTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2015</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDD2dQ3x8HdR8HdTcPZw9fV0dvRR8HV19nD0AzMD_H08gz08_dwVHBWCQ52CQ4IcQ1x5GFjTEnOKU3mhNDeDoptriLOHbmpBfnxqcUFicmpeakm8s5-hgYmJoZmJqbGjMTFqAH0PJs4</recordid><startdate>20150318</startdate><enddate>20150318</enddate><creator>HENDRON JEFFREY JAMES</creator><creator>NOWLAND JOHN G</creator><creator>VAN HANEHEM MATTHEW RICHARD</creator><creator>MURNANE JAMES</creator><creator>DEGROOT MARTY W</creator><creator>STRING DARRELL</creator><creator>JENSEN MICHELLE</creator><creator>YEH FENGJI</creator><creator>ISLAM MOHAMMAD T</creator><creator>QIAN BAINIAN</creator><scope>EVB</scope></search><sort><creationdate>20150318</creationdate><title>METHOD OF CHEMICAL MECHANICAL POLISHING A SUBSTRATE</title><author>HENDRON JEFFREY JAMES ; NOWLAND JOHN G ; VAN HANEHEM MATTHEW RICHARD ; MURNANE JAMES ; DEGROOT MARTY W ; STRING DARRELL ; JENSEN MICHELLE ; YEH FENGJI ; ISLAM MOHAMMAD T ; QIAN BAINIAN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN104416453A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2015</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMISTRY</topic><topic>COMPOSITIONS BASED THEREON</topic><topic>DRESSING OR CONDITIONING OF ABRADING SURFACES</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS</topic><topic>GRINDING</topic><topic>MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING</topic><topic>MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS</topic><topic>METALLURGY</topic><topic>ORGANIC MACROMOLECULAR COMPOUNDS</topic><topic>PERFORMING OPERATIONS</topic><topic>POLISHING</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>THEIR PREPARATION OR CHEMICAL WORKING-UP</topic><topic>TRANSPORTING</topic><toplevel>online_resources</toplevel><creatorcontrib>HENDRON JEFFREY JAMES</creatorcontrib><creatorcontrib>NOWLAND JOHN G</creatorcontrib><creatorcontrib>VAN HANEHEM MATTHEW RICHARD</creatorcontrib><creatorcontrib>MURNANE JAMES</creatorcontrib><creatorcontrib>DEGROOT MARTY W</creatorcontrib><creatorcontrib>STRING DARRELL</creatorcontrib><creatorcontrib>JENSEN MICHELLE</creatorcontrib><creatorcontrib>YEH FENGJI</creatorcontrib><creatorcontrib>ISLAM MOHAMMAD T</creatorcontrib><creatorcontrib>QIAN BAINIAN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>HENDRON JEFFREY JAMES</au><au>NOWLAND JOHN G</au><au>VAN HANEHEM MATTHEW RICHARD</au><au>MURNANE JAMES</au><au>DEGROOT MARTY W</au><au>STRING DARRELL</au><au>JENSEN MICHELLE</au><au>YEH FENGJI</au><au>ISLAM MOHAMMAD T</au><au>QIAN BAINIAN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHOD OF CHEMICAL MECHANICAL POLISHING A SUBSTRATE</title><date>2015-03-18</date><risdate>2015</risdate><abstract>A method of chemical mechanical polishing a substrate is provided, including: providing a substrate; providing a chemical mechanical polishing pad, comprising: a polishing layer having a composition and a polishing surface, wherein the composition of polishing layer is selected to exhibit an initial hydrolytic stability; coupled with a sustained hydrolytic instability; a rigid layer having a top surface and a bottom surface; a hot melt adhesive interposed between the base surface of the polishing layer and the top surface of the rigid layer; wherein the hot melt adhesive bonds the polishing layer to the rigid layer; a pressure sensitive platen adhesive layer having a stack side and a platen side; wherein the stack side of the pressure sensitive platen adhesive layer is adjacent to the bottom surface of the rigid layer; and, creating dynamic contact between the polishing surface and substrate to polish a surface of the substrate.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMISTRY COMPOSITIONS BASED THEREON DRESSING OR CONDITIONING OF ABRADING SURFACES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS METALLURGY ORGANIC MACROMOLECULAR COMPOUNDS PERFORMING OPERATIONS POLISHING SEMICONDUCTOR DEVICES THEIR PREPARATION OR CHEMICAL WORKING-UP TRANSPORTING |
| title | METHOD OF CHEMICAL MECHANICAL POLISHING A SUBSTRATE |
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