Gallium nitride-based Schottky diode and method of fabricating the same

Disclosed herein is a GaN-based Schottky diode. The GaN-based diode includes an intrinsic GaN-based semiconductor layer, GaN-based semiconductor layers configured to have a first conductivity type and bonded to the intrinsic GaN-based semiconductor layer, a first electrode made of metal and placed o...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	TAKEYA MOTONOBU, LEE, KANG NYUNG
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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