Gallium nitride-based Schottky diode and method of fabricating the same

Disclosed herein is a GaN-based Schottky diode. The GaN-based diode includes an intrinsic GaN-based semiconductor layer, GaN-based semiconductor layers configured to have a first conductivity type and bonded to the intrinsic GaN-based semiconductor layer, a first electrode made of metal and placed on a surface opposite a surface bonded to the GaN-based semiconductor layers of the intrinsic GaN-based semiconductor layer, a second electrode placed on a surface opposite to a surface bonded to the intrinsic GaN-based semiconductor layer of the GaN-based semiconductor layers of the first conductivity type, and voltage-resistant layers configured to have a second conductivity type and formed in some regions of the intrinsic GaN-based semiconductor layer that come in contact with edges of the first electrode. Furthermore the GaN-based Schottky diode comprises threading dislocations (TD) blocking insulating layers.