SOLID-STATE IMAGING DEVICE AND CAMERA MODULE

According to one embodiment of the present invention, a solid-state imaging device is provided. The solid-state imaging device includes a photoelectric conversion element, a first insulating film, a metal oxide film, an antireflection film, and a second insulating film. The photoelectric conversion...

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Bibliographische Detailangaben
1. Verfasser:	KAMIMURA MASAKI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC COMMUNICATION TECHNIQUE ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY PICTORIAL COMMUNICATION, e.g. TELEVISION SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	According to one embodiment of the present invention, a solid-state imaging device is provided. The solid-state imaging device includes a photoelectric conversion element, a first insulating film, a metal oxide film, an antireflection film, and a second insulating film. The photoelectric conversion element photoelectrically converts incident light into charges and stores the converted charges. The first insulating film is provided on a light-receiving surface of the photoelectric conversion element. The metal oxide film is provided on a light-receiving surface of the first insulating film. The antireflection film is provided on a light-receiving surface of the metal oxide film. The second insulating film is formed between the metal oxide film and the antireflection film, and has a thickness of 1 nm or more and 10 nm or less.