Trench gate IGBT chip

Trench gate IGBT chip

The invention provides a trench gate IGBT chip. The trench gate IGBT chip comprises a plurality of cells connected in parallel, each cell comprises a first trench gate and a second trench gate, each first trench gate and the corresponding second trench gate are isolated through a first conduction ty...

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Hauptverfasser: HUANG JIANWEI, LIU GUOYOU, TAN RONGZHEN
Format: Patent
Sprache:chi ; eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator HUANG JIANWEI
LIU GUOYOU
TAN RONGZHEN
description The invention provides a trench gate IGBT chip. The trench gate IGBT chip comprises a plurality of cells connected in parallel, each cell comprises a first trench gate and a second trench gate, each first trench gate and the corresponding second trench gate are isolated through a first conduction type region, each second trench gate is located on one side of the corresponding first trench gate, and an emitter and a second conduction type source electrode region are arranged on the other side of the corresponding first trench gate. The trench gate IGBT chip further comprises third trench gates formed in the first conduction type region, and the straight line where the gate lengths of the third trench gates are located is intersected with the straight line where the gate lengths of the second trench gates are located. Compared with the prior art, the trench gate IGBT chip has the advantages that technology difficulty and technology cost for manufacturing cannot be increased. In addition, as the third trench gat
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Trench gate IGBT chip
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