Method For Manufacturing Semiconductor Devices Having A Glass Substrate

Method For Manufacturing Semiconductor Devices Having A Glass Substrate

A method for manufacturing semiconductor devices is disclosed. A semiconductor wafer is provided having a first surface and a second surface opposite to the first surface. A first glass substrate is provided which has at least one of cavities and openings at the bonding surface. The first glass subs...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: MARKUS OTTOWITZ, KARIN SCHRETTLINGER, GERALD LACKNER, CARSTEN VON KOBLINSKI
Format: Patent
Sprache:chi ; eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator MARKUS OTTOWITZ
KARIN SCHRETTLINGER
GERALD LACKNER
CARSTEN VON KOBLINSKI
description A method for manufacturing semiconductor devices is disclosed. A semiconductor wafer is provided having a first surface and a second surface opposite to the first surface. A first glass substrate is provided which has at least one of cavities and openings at the bonding surface. The first glass substrate is bonded to the first surface of the semiconductor wafer such that the metal pads are arranged within respective cavities or openings of the first glass substrate. The second surface of the semiconductor wafer is machined. At least one metallisation region is formed on the machined second surface of the semiconductor wafer.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN104112729A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN104112729A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN104112729A3</originalsourceid><addsrcrecordid>eNrjZHD3TS3JyE9RcMsvUvBNzCtNS0wuKS3KzEtXCE7NzUzOz0spTS4ByrmklmUmpxYreCSWgSQdFdxzEouLFYJLk4pLihJLUnkYWNMSc4pTeaE0N4Oim2uIs4duakF-fGpxQWJyal5qSbyzn6GBiaGhkbmRpaMxMWoANhEzdw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Method For Manufacturing Semiconductor Devices Having A Glass Substrate</title><source>esp@cenet</source><creator>MARKUS OTTOWITZ ; KARIN SCHRETTLINGER ; GERALD LACKNER ; CARSTEN VON KOBLINSKI</creator><creatorcontrib>MARKUS OTTOWITZ ; KARIN SCHRETTLINGER ; GERALD LACKNER ; CARSTEN VON KOBLINSKI</creatorcontrib><description>A method for manufacturing semiconductor devices is disclosed. A semiconductor wafer is provided having a first surface and a second surface opposite to the first surface. A first glass substrate is provided which has at least one of cavities and openings at the bonding surface. The first glass substrate is bonded to the first surface of the semiconductor wafer such that the metal pads are arranged within respective cavities or openings of the first glass substrate. The second surface of the semiconductor wafer is machined. At least one metallisation region is formed on the machined second surface of the semiconductor wafer.</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2014</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20141022&amp;DB=EPODOC&amp;CC=CN&amp;NR=104112729A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20141022&amp;DB=EPODOC&amp;CC=CN&amp;NR=104112729A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>MARKUS OTTOWITZ</creatorcontrib><creatorcontrib>KARIN SCHRETTLINGER</creatorcontrib><creatorcontrib>GERALD LACKNER</creatorcontrib><creatorcontrib>CARSTEN VON KOBLINSKI</creatorcontrib><title>Method For Manufacturing Semiconductor Devices Having A Glass Substrate</title><description>A method for manufacturing semiconductor devices is disclosed. A semiconductor wafer is provided having a first surface and a second surface opposite to the first surface. A first glass substrate is provided which has at least one of cavities and openings at the bonding surface. The first glass substrate is bonded to the first surface of the semiconductor wafer such that the metal pads are arranged within respective cavities or openings of the first glass substrate. The second surface of the semiconductor wafer is machined. At least one metallisation region is formed on the machined second surface of the semiconductor wafer.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2014</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHD3TS3JyE9RcMsvUvBNzCtNS0wuKS3KzEtXCE7NzUzOz0spTS4ByrmklmUmpxYreCSWgSQdFdxzEouLFYJLk4pLihJLUnkYWNMSc4pTeaE0N4Oim2uIs4duakF-fGpxQWJyal5qSbyzn6GBiaGhkbmRpaMxMWoANhEzdw</recordid><startdate>20141022</startdate><enddate>20141022</enddate><creator>MARKUS OTTOWITZ</creator><creator>KARIN SCHRETTLINGER</creator><creator>GERALD LACKNER</creator><creator>CARSTEN VON KOBLINSKI</creator><scope>EVB</scope></search><sort><creationdate>20141022</creationdate><title>Method For Manufacturing Semiconductor Devices Having A Glass Substrate</title><author>MARKUS OTTOWITZ ; KARIN SCHRETTLINGER ; GERALD LACKNER ; CARSTEN VON KOBLINSKI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN104112729A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2014</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>MARKUS OTTOWITZ</creatorcontrib><creatorcontrib>KARIN SCHRETTLINGER</creatorcontrib><creatorcontrib>GERALD LACKNER</creatorcontrib><creatorcontrib>CARSTEN VON KOBLINSKI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>MARKUS OTTOWITZ</au><au>KARIN SCHRETTLINGER</au><au>GERALD LACKNER</au><au>CARSTEN VON KOBLINSKI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method For Manufacturing Semiconductor Devices Having A Glass Substrate</title><date>2014-10-22</date><risdate>2014</risdate><abstract>A method for manufacturing semiconductor devices is disclosed. A semiconductor wafer is provided having a first surface and a second surface opposite to the first surface. A first glass substrate is provided which has at least one of cavities and openings at the bonding surface. The first glass substrate is bonded to the first surface of the semiconductor wafer such that the metal pads are arranged within respective cavities or openings of the first glass substrate. The second surface of the semiconductor wafer is machined. At least one metallisation region is formed on the machined second surface of the semiconductor wafer.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language chi ; eng
recordid cdi_epo_espacenet_CN104112729A
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Method For Manufacturing Semiconductor Devices Having A Glass Substrate
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-05T09%3A36%3A57IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=MARKUS%20OTTOWITZ&rft.date=2014-10-22&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ECN104112729A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true