Threshold voltage adjustment for thin body MOSFETS

A structure includes a substrate; a transistor disposed over the substrate, the transistor comprising a fin comprised of Silicon that is implanted with Carbon; and a gate dielectric layer and gate metal layer overlying a portion of the fin that defines a channel of the transistor. In the structure a...

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Bibliographische Detailangaben

Hauptverfasser:	GUO DECHAO, CAI MING, NARASIMHA SHREESH, BRODSKY MARY JANE, LIANG YUE, WANG YANFENG, HENSON WILLIAM K, YE JUNCHENG, SONG LIYANG
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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