Method for improving quality of gate oxide

The invention provides a method for improving quality of a gate oxide. The method is characterized by including the steps of providing a silicon substrate, removing a natural oxide layer on the surface of the silicon substrate through a wet cleaning process, continuing to place the silicon substrate...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	JIANG RUNFENG
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!