Power mosfet and forming method thereof

A power MOSFET and a forming method thereof are provided. A device comprises a trench extending to a semiconductor region and having a first conductivity, and a conductive field plate located in the trench. A first dielectric layer separates the bottom and the side wall of the field plate from the s...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	LIU RUIXING, WU ZHENWEI, ZHOU XUELIANG, SU BAIZHI
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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