Preparation method of STI (shallow trench isolation) structure

The invention relates to the technical field of semiconductors and discloses a preparation method of an STI structure. The preparation method comprises the steps as follows: providing a semiconductor substrate covered with a silicon dioxide layer on the surface; forming a first trench in the semicon...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	JIANG RUNFENG
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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