Method and apparatus for multizone plasma generation

Embodiments of the present invention provide a method and apparatus for plasma processing a substrate to form a film on the substrate and devices disposed thereon by controlling the ratio of ions to radicals in the plasma at a given pressure. A given pressure may be maintained to promote ion product...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	OLSEN CHRISTOPHER S, ROGERS MATTHEW SCOTT, HUA ZHONGQIANG
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY PLASMA TECHNIQUE PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!