Semiconductor device and method for manufacturing same
The present invention relates to a semiconductor device and a method for making the same. The semiconductor device includes a substrate, a first redistribution layer and a conductive via. The substrate has a substrate body and a pad. The pad and the first redistribution layer are disposed adjacent t...
Gespeichert in:
Hauptverfasser: | , , , |
---|---|
Format: | Patent |
Sprache: | chi ; eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | |
container_start_page | |
container_title | |
container_volume | |
creator | HSU CHIH-JING OU YING-TE FU CHIEHN HUANG CHE-HAU |
description | The present invention relates to a semiconductor device and a method for making the same. The semiconductor device includes a substrate, a first redistribution layer and a conductive via. The substrate has a substrate body and a pad. The pad and the first redistribution layer are disposed adjacent to the first surface of the substrate body, and electrically connected to each other. The interconnection metal is disposed in a through hole of the substrate body, and contacts the first redistribution layer. Whereby, the pad can be electrically connected to the second surface of the substrate body through the first redistribution layer and the conductive via. |
format | Patent |
fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN103258803A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN103258803A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN103258803A3</originalsourceid><addsrcrecordid>eNrjZDALTs3NTM7PSylNLskvUkhJLctMTlVIzEtRyE0tychPUUgDiuYm5pWmJSaXlBZl5qUrFCfmpvIwsKYl5hSn8kJpbgZFN9cQZw_d1IL8-NTigsTk1LzUknhnP0MDYyNTCwsDY0djYtQAALeCLb0</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Semiconductor device and method for manufacturing same</title><source>esp@cenet</source><creator>HSU CHIH-JING ; OU YING-TE ; FU CHIEHN ; HUANG CHE-HAU</creator><creatorcontrib>HSU CHIH-JING ; OU YING-TE ; FU CHIEHN ; HUANG CHE-HAU</creatorcontrib><description>The present invention relates to a semiconductor device and a method for making the same. The semiconductor device includes a substrate, a first redistribution layer and a conductive via. The substrate has a substrate body and a pad. The pad and the first redistribution layer are disposed adjacent to the first surface of the substrate body, and electrically connected to each other. The interconnection metal is disposed in a through hole of the substrate body, and contacts the first redistribution layer. Whereby, the pad can be electrically connected to the second surface of the substrate body through the first redistribution layer and the conductive via.</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2013</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20130821&DB=EPODOC&CC=CN&NR=103258803A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20130821&DB=EPODOC&CC=CN&NR=103258803A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HSU CHIH-JING</creatorcontrib><creatorcontrib>OU YING-TE</creatorcontrib><creatorcontrib>FU CHIEHN</creatorcontrib><creatorcontrib>HUANG CHE-HAU</creatorcontrib><title>Semiconductor device and method for manufacturing same</title><description>The present invention relates to a semiconductor device and a method for making the same. The semiconductor device includes a substrate, a first redistribution layer and a conductive via. The substrate has a substrate body and a pad. The pad and the first redistribution layer are disposed adjacent to the first surface of the substrate body, and electrically connected to each other. The interconnection metal is disposed in a through hole of the substrate body, and contacts the first redistribution layer. Whereby, the pad can be electrically connected to the second surface of the substrate body through the first redistribution layer and the conductive via.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2013</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDALTs3NTM7PSylNLskvUkhJLctMTlVIzEtRyE0tychPUUgDiuYm5pWmJSaXlBZl5qUrFCfmpvIwsKYl5hSn8kJpbgZFN9cQZw_d1IL8-NTigsTk1LzUknhnP0MDYyNTCwsDY0djYtQAALeCLb0</recordid><startdate>20130821</startdate><enddate>20130821</enddate><creator>HSU CHIH-JING</creator><creator>OU YING-TE</creator><creator>FU CHIEHN</creator><creator>HUANG CHE-HAU</creator><scope>EVB</scope></search><sort><creationdate>20130821</creationdate><title>Semiconductor device and method for manufacturing same</title><author>HSU CHIH-JING ; OU YING-TE ; FU CHIEHN ; HUANG CHE-HAU</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN103258803A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2013</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>HSU CHIH-JING</creatorcontrib><creatorcontrib>OU YING-TE</creatorcontrib><creatorcontrib>FU CHIEHN</creatorcontrib><creatorcontrib>HUANG CHE-HAU</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>HSU CHIH-JING</au><au>OU YING-TE</au><au>FU CHIEHN</au><au>HUANG CHE-HAU</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Semiconductor device and method for manufacturing same</title><date>2013-08-21</date><risdate>2013</risdate><abstract>The present invention relates to a semiconductor device and a method for making the same. The semiconductor device includes a substrate, a first redistribution layer and a conductive via. The substrate has a substrate body and a pad. The pad and the first redistribution layer are disposed adjacent to the first surface of the substrate body, and electrically connected to each other. The interconnection metal is disposed in a through hole of the substrate body, and contacts the first redistribution layer. Whereby, the pad can be electrically connected to the second surface of the substrate body through the first redistribution layer and the conductive via.</abstract><oa>free_for_read</oa></addata></record> |
fulltext | fulltext_linktorsrc |
identifier | |
ispartof | |
issn | |
language | chi ; eng |
recordid | cdi_epo_espacenet_CN103258803A |
source | esp@cenet |
subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
title | Semiconductor device and method for manufacturing same |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-07T03%3A17%3A42IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=HSU%20CHIH-JING&rft.date=2013-08-21&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ECN103258803A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |