Insulated gate bipolar translator (IGBT) chip and manufacturing method of copper metallization structure on right side of IGBT chip

Insulated gate bipolar translator (IGBT) chip and manufacturing method of copper metallization structure on right side of IGBT chip

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Hauptverfasser: HUANG JIANWEI, LIU GUOYOU, TAN RONGZHEN
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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LIU GUOYOU
TAN RONGZHEN
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Insulated gate bipolar translator (IGBT) chip and manufacturing method of copper metallization structure on right side of IGBT chip
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