Method and device for producing polycrystalline silicon blocks
The invention relates to a device and method for producing a polycrystalline silicon block in a melting crucible which is disposed in a process chamber and filled with silicon material. The silicon material is melted in the melting crucible in order to form a silicon melt and is then cooled to below...
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| creator | HOESS CHRISTIAN HUSSY STEPHAN |
| description | The invention relates to a device and method for producing a polycrystalline silicon block in a melting crucible which is disposed in a process chamber and filled with silicon material. The silicon material is melted in the melting crucible in order to form a silicon melt and is then cooled to below the solidification temperature of the silicon. During a section of the process, a plate element which is located in the process chamber and has a through-opening can be disposed above the silicon melt and cooled in the melting crucible to below the solidification temperature of the silicon melt; and a gas flow can be directed at least partially via the at least one through-opening in the plate element onto the surface the silicon melt. Alternatively, a method and a melting crucible arrangement consisting of a melting crucible and a retaining ring are described. The retaining ring can be placed on or above a melting crucible filled with silicon material, such that additional silicon material can be received in the |
| format | Patent |
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The silicon material is melted in the melting crucible in order to form a silicon melt and is then cooled to below the solidification temperature of the silicon. During a section of the process, a plate element which is located in the process chamber and has a through-opening can be disposed above the silicon melt and cooled in the melting crucible to below the solidification temperature of the silicon melt; and a gas flow can be directed at least partially via the at least one through-opening in the plate element onto the surface the silicon melt. Alternatively, a method and a melting crucible arrangement consisting of a melting crucible and a retaining ring are described. 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The silicon material is melted in the melting crucible in order to form a silicon melt and is then cooled to below the solidification temperature of the silicon. During a section of the process, a plate element which is located in the process chamber and has a through-opening can be disposed above the silicon melt and cooled in the melting crucible to below the solidification temperature of the silicon melt; and a gas flow can be directed at least partially via the at least one through-opening in the plate element onto the surface the silicon melt. Alternatively, a method and a melting crucible arrangement consisting of a melting crucible and a retaining ring are described. 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| language | chi ; eng |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH GLASS MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES METALLURGY MINERAL OR SLAG WOOL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | Method and device for producing polycrystalline silicon blocks |
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