Apparatus for depositing a thin film of material on a substrate and regeneration process for such an apparatus
The present invention concerns an apparatus for depositing a thin film of material on a substrate and a regeneration process. The apparatus comprises a chamber (1), a cryogenic panel (10) disposed inside the chamber, a sample holder (6) able to support a substrate, a gas injector (9) able to inject...
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| creator | VILLETTE JEROME CHAIX CATHERINE CASSAGNE VALERICK |
| description | The present invention concerns an apparatus for depositing a thin film of material on a substrate and a regeneration process. The apparatus comprises a chamber (1), a cryogenic panel (10) disposed inside the chamber, a sample holder (6) able to support a substrate, a gas injector (9) able to inject a gaseous precursor into the chamber (1), first trap means (11) connected to said vacuum chamber (1) and able to trap a part of the gaseous precursor released by said cryogenic panel (10), said first trap means (11) having a fixed pumping capacity S 1 . According to the invention, the apparatus for depositing a thin film of material on a substrate comprises second trap means (18) having a variable pumping capacity S 2 able to be regulated in function of the gaseous precursor partial pressure, the first and second trap means providing a total pumping capacity S = S 1 + S 2 sufficient to maintain the gaseous precursor partial pressure in the vacuum chamber (1) under a determined pressure P L . |
| format | Patent |
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The apparatus comprises a chamber (1), a cryogenic panel (10) disposed inside the chamber, a sample holder (6) able to support a substrate, a gas injector (9) able to inject a gaseous precursor into the chamber (1), first trap means (11) connected to said vacuum chamber (1) and able to trap a part of the gaseous precursor released by said cryogenic panel (10), said first trap means (11) having a fixed pumping capacity S 1 . According to the invention, the apparatus for depositing a thin film of material on a substrate comprises second trap means (18) having a variable pumping capacity S 2 able to be regulated in function of the gaseous precursor partial pressure, the first and second trap means providing a total pumping capacity S = S 1 + S 2 sufficient to maintain the gaseous precursor partial pressure in the vacuum chamber (1) under a determined pressure P L .</description><language>eng</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; CRYSTAL GROWTH ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>2015</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20150422&DB=EPODOC&CC=CN&NR=102803579B$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20150422&DB=EPODOC&CC=CN&NR=102803579B$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>VILLETTE JEROME</creatorcontrib><creatorcontrib>CHAIX CATHERINE</creatorcontrib><creatorcontrib>CASSAGNE VALERICK</creatorcontrib><title>Apparatus for depositing a thin film of material on a substrate and regeneration process for such an apparatus</title><description>The present invention concerns an apparatus for depositing a thin film of material on a substrate and a regeneration process. The apparatus comprises a chamber (1), a cryogenic panel (10) disposed inside the chamber, a sample holder (6) able to support a substrate, a gas injector (9) able to inject a gaseous precursor into the chamber (1), first trap means (11) connected to said vacuum chamber (1) and able to trap a part of the gaseous precursor released by said cryogenic panel (10), said first trap means (11) having a fixed pumping capacity S 1 . According to the invention, the apparatus for depositing a thin film of material on a substrate comprises second trap means (18) having a variable pumping capacity S 2 able to be regulated in function of the gaseous precursor partial pressure, the first and second trap means providing a total pumping capacity S = S 1 + S 2 sufficient to maintain the gaseous precursor partial pressure in the vacuum chamber (1) under a determined pressure P L .</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>CRYSTAL GROWTH</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2015</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjTELwjAUhLM4iPofHu5CtYh1tEVxcnIvz_SlDaRJyEv-vw_U3ek47ru7pfKXGDFhLgwmJBgoBrbZ-hEQ8mQ9GOtmCAZmzJQsOgheIi4vzlIjQD9AopE8ibUSxhQ08WeOi56EAPydrNXCoGPafHWltrfrs7vv5LcnjqhlKPfdY18dmqo-ns5tW_8FvQEkdUL7</recordid><startdate>20150422</startdate><enddate>20150422</enddate><creator>VILLETTE JEROME</creator><creator>CHAIX CATHERINE</creator><creator>CASSAGNE VALERICK</creator><scope>EVB</scope></search><sort><creationdate>20150422</creationdate><title>Apparatus for depositing a thin film of material on a substrate and regeneration process for such an apparatus</title><author>VILLETTE JEROME ; CHAIX CATHERINE ; CASSAGNE VALERICK</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN102803579BB3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2015</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>CRYSTAL GROWTH</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>VILLETTE JEROME</creatorcontrib><creatorcontrib>CHAIX CATHERINE</creatorcontrib><creatorcontrib>CASSAGNE VALERICK</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>VILLETTE JEROME</au><au>CHAIX CATHERINE</au><au>CASSAGNE VALERICK</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Apparatus for depositing a thin film of material on a substrate and regeneration process for such an apparatus</title><date>2015-04-22</date><risdate>2015</risdate><abstract>The present invention concerns an apparatus for depositing a thin film of material on a substrate and a regeneration process. The apparatus comprises a chamber (1), a cryogenic panel (10) disposed inside the chamber, a sample holder (6) able to support a substrate, a gas injector (9) able to inject a gaseous precursor into the chamber (1), first trap means (11) connected to said vacuum chamber (1) and able to trap a part of the gaseous precursor released by said cryogenic panel (10), said first trap means (11) having a fixed pumping capacity S 1 . According to the invention, the apparatus for depositing a thin film of material on a substrate comprises second trap means (18) having a variable pumping capacity S 2 able to be regulated in function of the gaseous precursor partial pressure, the first and second trap means providing a total pumping capacity S = S 1 + S 2 sufficient to maintain the gaseous precursor partial pressure in the vacuum chamber (1) under a determined pressure P L .</abstract><oa>free_for_read</oa></addata></record> |
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| language | eng |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | Apparatus for depositing a thin film of material on a substrate and regeneration process for such an apparatus |
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