Method for producing semiconductor film and semiconductor film
The embodiment of the invention discloses a method for producing a semiconductor film. The method comprises the steps of: obtaining a substrate material; producing a gallium nitride layer on the substrate material; and producing an aluminium-gallium-nitrogen layer on the gallium nitride layer, and e...
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| creator | JIANG YADONG LI SHIBIN WU ZHIMING XIAO ZHANFEI |
| description | The embodiment of the invention discloses a method for producing a semiconductor film. The method comprises the steps of: obtaining a substrate material; producing a gallium nitride layer on the substrate material; and producing an aluminium-gallium-nitrogen layer on the gallium nitride layer, and enabling the aluminium content in the aluminium-gallium-nitrogen layer to linearly change from the part which is close to the aluminium-gallium-nitrogen layer to the part which is far away from the aluminium-gallium-nitrogen layer. According to the semiconductor film disclosed by the embodiment of the invention, an internal polarization electric field can be structured through the polarization effect difference and the polarization intensity difference of gallium nitride and aluminium nitride, and can also absorb charge carriers in a substrate into the electric field, and thus, the doping with ultrahigh charge carrier concentration is realized. The method is controllable to operate, and simple and feasible, has good |
| format | Patent |
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The method comprises the steps of: obtaining a substrate material; producing a gallium nitride layer on the substrate material; and producing an aluminium-gallium-nitrogen layer on the gallium nitride layer, and enabling the aluminium content in the aluminium-gallium-nitrogen layer to linearly change from the part which is close to the aluminium-gallium-nitrogen layer to the part which is far away from the aluminium-gallium-nitrogen layer. According to the semiconductor film disclosed by the embodiment of the invention, an internal polarization electric field can be structured through the polarization effect difference and the polarization intensity difference of gallium nitride and aluminium nitride, and can also absorb charge carriers in a substrate into the electric field, and thus, the doping with ultrahigh charge carrier concentration is realized. The method is controllable to operate, and simple and feasible, has good</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Method for producing semiconductor film and semiconductor film |
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