Manufacturing method for polycrystalline silicon ingot, and polycrystalline silicon ingot
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creator | WAKITA SABURO TSUZUKIHASHI KOJI IKEDA HIROSHI KANAI MASAHIRO |
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fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN102781832BB</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN102781832BB</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN102781832BB3</originalsourceid><addsrcrecordid>eNrjZIj0TcwrTUtMLiktysxLV8hNLcnIT1FIyy9SKMjPqUwuqiwuSczJycxLVSjOzMlMzs9TACrLL9FRSMxLwa-Eh4E1LTGnOJUXSnMzKLm5hjh76KYW5MenFhckJqfmpZbEO_sZGhiZWxhaGBs5ORkTpQgA_W08Yw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Manufacturing method for polycrystalline silicon ingot, and polycrystalline silicon ingot</title><source>esp@cenet</source><creator>WAKITA SABURO ; TSUZUKIHASHI KOJI ; IKEDA HIROSHI ; KANAI MASAHIRO</creator><creatorcontrib>WAKITA SABURO ; TSUZUKIHASHI KOJI ; IKEDA HIROSHI ; KANAI MASAHIRO</creatorcontrib><language>eng</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; CASTING ; CASTING OF METALS ; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES ; CHEMISTRY ; COMPOUNDS THEREOF ; CRYSTAL GROWTH ; INORGANIC CHEMISTRY ; METALLURGY ; NON-METALLIC ELEMENTS ; PERFORMING OPERATIONS ; POWDER METALLURGY ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; TRANSPORTING ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>2015</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20150211&DB=EPODOC&CC=CN&NR=102781832B$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20150211&DB=EPODOC&CC=CN&NR=102781832B$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>WAKITA SABURO</creatorcontrib><creatorcontrib>TSUZUKIHASHI KOJI</creatorcontrib><creatorcontrib>IKEDA HIROSHI</creatorcontrib><creatorcontrib>KANAI MASAHIRO</creatorcontrib><title>Manufacturing method for polycrystalline silicon ingot, and polycrystalline silicon ingot</title><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>CASTING</subject><subject>CASTING OF METALS</subject><subject>CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES</subject><subject>CHEMISTRY</subject><subject>COMPOUNDS THEREOF</subject><subject>CRYSTAL GROWTH</subject><subject>INORGANIC CHEMISTRY</subject><subject>METALLURGY</subject><subject>NON-METALLIC ELEMENTS</subject><subject>PERFORMING OPERATIONS</subject><subject>POWDER METALLURGY</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>TRANSPORTING</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2015</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZIj0TcwrTUtMLiktysxLV8hNLcnIT1FIyy9SKMjPqUwuqiwuSczJycxLVSjOzMlMzs9TACrLL9FRSMxLwa-Eh4E1LTGnOJUXSnMzKLm5hjh76KYW5MenFhckJqfmpZbEO_sZGhiZWxhaGBs5ORkTpQgA_W08Yw</recordid><startdate>20150211</startdate><enddate>20150211</enddate><creator>WAKITA SABURO</creator><creator>TSUZUKIHASHI KOJI</creator><creator>IKEDA HIROSHI</creator><creator>KANAI MASAHIRO</creator><scope>EVB</scope></search><sort><creationdate>20150211</creationdate><title>Manufacturing method for polycrystalline silicon ingot, and polycrystalline silicon ingot</title><author>WAKITA SABURO ; TSUZUKIHASHI KOJI ; IKEDA HIROSHI ; KANAI MASAHIRO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN102781832BB3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2015</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>CASTING</topic><topic>CASTING OF METALS</topic><topic>CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES</topic><topic>CHEMISTRY</topic><topic>COMPOUNDS THEREOF</topic><topic>CRYSTAL GROWTH</topic><topic>INORGANIC CHEMISTRY</topic><topic>METALLURGY</topic><topic>NON-METALLIC ELEMENTS</topic><topic>PERFORMING OPERATIONS</topic><topic>POWDER METALLURGY</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>TRANSPORTING</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>WAKITA SABURO</creatorcontrib><creatorcontrib>TSUZUKIHASHI KOJI</creatorcontrib><creatorcontrib>IKEDA HIROSHI</creatorcontrib><creatorcontrib>KANAI MASAHIRO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>WAKITA SABURO</au><au>TSUZUKIHASHI KOJI</au><au>IKEDA HIROSHI</au><au>KANAI MASAHIRO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Manufacturing method for polycrystalline silicon ingot, and polycrystalline silicon ingot</title><date>2015-02-11</date><risdate>2015</risdate><oa>free_for_read</oa></addata></record> |
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subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CASTING CASTING OF METALS CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES CHEMISTRY COMPOUNDS THEREOF CRYSTAL GROWTH INORGANIC CHEMISTRY METALLURGY NON-METALLIC ELEMENTS PERFORMING OPERATIONS POWDER METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH TRANSPORTING UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
title | Manufacturing method for polycrystalline silicon ingot, and polycrystalline silicon ingot |
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