Super-high density power trench MOSFET

A method, in one embodiment, can include forming a plurality of trenches in a body region for a vertical metal-oxide semiconductor field-effect transistor (MOSFET). In addition, the method can include angle implanting source regions into the body region. Furthermore, dielectric material can be grown...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	SHI SHARON, CHEN QUFEI, XU ROBERT Q, LICHTENBERGER KARL, CHEN KUO-IN, TERRILL KYLE
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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