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creator SINGH SARAVJEET
NANGOY ROY C
FARR JON C
PAMARTHY SHARMA V
KUMAR AJAY
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN102763198BB</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN102763198BB</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN102763198BB3</originalsourceid><addsrcrecordid>eNqNirsKwkAQANNYiPoPi71gDPhoExQbrWwlLHt7yUK8PW4vgn-vgh8gzDDNTIv7hXOvDjB8jBET5tHAa4Jeuh7YeyHhQC_o0MCJmZJgFg0gX9xIWZ4MpGMc2EEc0B4IiZGypnkx8TgYL36dFcvT8dacVxy1ZYtIHDi3zbVcb3bbqjzs67r6a3oDfAQ89w</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Method and apparatus for high efficiency gas dissociation in inductive coupled plasma reactor</title><source>esp@cenet</source><creator>SINGH SARAVJEET ; NANGOY ROY C ; FARR JON C ; PAMARTHY SHARMA V ; KUMAR AJAY</creator><creatorcontrib>SINGH SARAVJEET ; NANGOY ROY C ; FARR JON C ; PAMARTHY SHARMA V ; KUMAR AJAY</creatorcontrib><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2015</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20150506&amp;DB=EPODOC&amp;CC=CN&amp;NR=102763198B$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20150506&amp;DB=EPODOC&amp;CC=CN&amp;NR=102763198B$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SINGH SARAVJEET</creatorcontrib><creatorcontrib>NANGOY ROY C</creatorcontrib><creatorcontrib>FARR JON C</creatorcontrib><creatorcontrib>PAMARTHY SHARMA V</creatorcontrib><creatorcontrib>KUMAR AJAY</creatorcontrib><title>Method and apparatus for high efficiency gas dissociation in inductive coupled plasma reactor</title><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2015</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNirsKwkAQANNYiPoPi71gDPhoExQbrWwlLHt7yUK8PW4vgn-vgh8gzDDNTIv7hXOvDjB8jBET5tHAa4Jeuh7YeyHhQC_o0MCJmZJgFg0gX9xIWZ4MpGMc2EEc0B4IiZGypnkx8TgYL36dFcvT8dacVxy1ZYtIHDi3zbVcb3bbqjzs67r6a3oDfAQ89w</recordid><startdate>20150506</startdate><enddate>20150506</enddate><creator>SINGH SARAVJEET</creator><creator>NANGOY ROY C</creator><creator>FARR JON C</creator><creator>PAMARTHY SHARMA V</creator><creator>KUMAR AJAY</creator><scope>EVB</scope></search><sort><creationdate>20150506</creationdate><title>Method and apparatus for high efficiency gas dissociation in inductive coupled plasma reactor</title><author>SINGH SARAVJEET ; NANGOY ROY C ; FARR JON C ; PAMARTHY SHARMA V ; KUMAR AJAY</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN102763198BB3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2015</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>SINGH SARAVJEET</creatorcontrib><creatorcontrib>NANGOY ROY C</creatorcontrib><creatorcontrib>FARR JON C</creatorcontrib><creatorcontrib>PAMARTHY SHARMA V</creatorcontrib><creatorcontrib>KUMAR AJAY</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SINGH SARAVJEET</au><au>NANGOY ROY C</au><au>FARR JON C</au><au>PAMARTHY SHARMA V</au><au>KUMAR AJAY</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method and apparatus for high efficiency gas dissociation in inductive coupled plasma reactor</title><date>2015-05-06</date><risdate>2015</risdate><oa>free_for_read</oa></addata></record>
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recordid cdi_epo_espacenet_CN102763198BB
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
DIFFUSION TREATMENT OF METALLIC MATERIAL
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
METALLURGY
SEMICONDUCTOR DEVICES
SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
title Method and apparatus for high efficiency gas dissociation in inductive coupled plasma reactor
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-06T16%3A17%3A22IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=SINGH%20SARAVJEET&rft.date=2015-05-06&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ECN102763198BB%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true