Layer transfer using boron-doped sige layer
A method for layer transfer using a boron-doped silicon germanium (SiGe) layer includes forming a boron-doped SiGe layer on a bulk silicon substrate; forming an upper silicon (Si) layer over the boron-doped SiGe layer; hydrogenating the boron-doped SiGe layer; bonding the upper Si layer to an altern...
Gespeichert in:
| Hauptverfasser: | , , , , , |
|---|---|
| Format: | Patent |
| Sprache: | chi ; eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | VICHICONTI JAMES FOGEL KEITH KIM JEE HWAN INNS DANIEL SADANA DEVENDRA BEDELL STEPHEN |
| description | A method for layer transfer using a boron-doped silicon germanium (SiGe) layer includes forming a boron-doped SiGe layer on a bulk silicon substrate; forming an upper silicon (Si) layer over the boron-doped SiGe layer; hydrogenating the boron-doped SiGe layer; bonding the upper Si layer to an alternate substrate; and propagating a fracture at an interface between the boron-doped SiGe layer and the bulk silicon substrate. A system for layer transfer using a boron-doped silicon germanium (SiGe) layer includes a bulk silicon substrate; a boron-doped Si Ge layer formed on the bulk silicon substrate, such that the boron-doped SiGe layer is located underneath an upper silicon (Si) layer, wherein the boron- doped SiGe layer is configured to propagate a fracture at an interface between the boron- doped SiGe layer and the bulk silicon substrate after hydrogenation of the boron-doped SiGe layer; and an alternate substrate bonded to the upper Si layer. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN102741980A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN102741980A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN102741980A3</originalsourceid><addsrcrecordid>eNrjZND2SaxMLVIoKUrMK04DMkqLM_PSFZLyi_LzdFPyC1JTFIoz01MVckCqeBhY0xJzilN5oTQ3g6Kba4izh25qQX58anFBYnJqXmpJvLOfoYGRuYmhpYWBozExagBdyilY</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Layer transfer using boron-doped sige layer</title><source>esp@cenet</source><creator>VICHICONTI JAMES ; FOGEL KEITH ; KIM JEE HWAN ; INNS DANIEL ; SADANA DEVENDRA ; BEDELL STEPHEN</creator><creatorcontrib>VICHICONTI JAMES ; FOGEL KEITH ; KIM JEE HWAN ; INNS DANIEL ; SADANA DEVENDRA ; BEDELL STEPHEN</creatorcontrib><description>A method for layer transfer using a boron-doped silicon germanium (SiGe) layer includes forming a boron-doped SiGe layer on a bulk silicon substrate; forming an upper silicon (Si) layer over the boron-doped SiGe layer; hydrogenating the boron-doped SiGe layer; bonding the upper Si layer to an alternate substrate; and propagating a fracture at an interface between the boron-doped SiGe layer and the bulk silicon substrate. A system for layer transfer using a boron-doped silicon germanium (SiGe) layer includes a bulk silicon substrate; a boron-doped Si Ge layer formed on the bulk silicon substrate, such that the boron-doped SiGe layer is located underneath an upper silicon (Si) layer, wherein the boron- doped SiGe layer is configured to propagate a fracture at an interface between the boron- doped SiGe layer and the bulk silicon substrate after hydrogenation of the boron-doped SiGe layer; and an alternate substrate bonded to the upper Si layer.</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2012</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20121017&DB=EPODOC&CC=CN&NR=102741980A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20121017&DB=EPODOC&CC=CN&NR=102741980A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>VICHICONTI JAMES</creatorcontrib><creatorcontrib>FOGEL KEITH</creatorcontrib><creatorcontrib>KIM JEE HWAN</creatorcontrib><creatorcontrib>INNS DANIEL</creatorcontrib><creatorcontrib>SADANA DEVENDRA</creatorcontrib><creatorcontrib>BEDELL STEPHEN</creatorcontrib><title>Layer transfer using boron-doped sige layer</title><description>A method for layer transfer using a boron-doped silicon germanium (SiGe) layer includes forming a boron-doped SiGe layer on a bulk silicon substrate; forming an upper silicon (Si) layer over the boron-doped SiGe layer; hydrogenating the boron-doped SiGe layer; bonding the upper Si layer to an alternate substrate; and propagating a fracture at an interface between the boron-doped SiGe layer and the bulk silicon substrate. A system for layer transfer using a boron-doped silicon germanium (SiGe) layer includes a bulk silicon substrate; a boron-doped Si Ge layer formed on the bulk silicon substrate, such that the boron-doped SiGe layer is located underneath an upper silicon (Si) layer, wherein the boron- doped SiGe layer is configured to propagate a fracture at an interface between the boron- doped SiGe layer and the bulk silicon substrate after hydrogenation of the boron-doped SiGe layer; and an alternate substrate bonded to the upper Si layer.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2012</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZND2SaxMLVIoKUrMK04DMkqLM_PSFZLyi_LzdFPyC1JTFIoz01MVckCqeBhY0xJzilN5oTQ3g6Kba4izh25qQX58anFBYnJqXmpJvLOfoYGRuYmhpYWBozExagBdyilY</recordid><startdate>20121017</startdate><enddate>20121017</enddate><creator>VICHICONTI JAMES</creator><creator>FOGEL KEITH</creator><creator>KIM JEE HWAN</creator><creator>INNS DANIEL</creator><creator>SADANA DEVENDRA</creator><creator>BEDELL STEPHEN</creator><scope>EVB</scope></search><sort><creationdate>20121017</creationdate><title>Layer transfer using boron-doped sige layer</title><author>VICHICONTI JAMES ; FOGEL KEITH ; KIM JEE HWAN ; INNS DANIEL ; SADANA DEVENDRA ; BEDELL STEPHEN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN102741980A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2012</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>VICHICONTI JAMES</creatorcontrib><creatorcontrib>FOGEL KEITH</creatorcontrib><creatorcontrib>KIM JEE HWAN</creatorcontrib><creatorcontrib>INNS DANIEL</creatorcontrib><creatorcontrib>SADANA DEVENDRA</creatorcontrib><creatorcontrib>BEDELL STEPHEN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>VICHICONTI JAMES</au><au>FOGEL KEITH</au><au>KIM JEE HWAN</au><au>INNS DANIEL</au><au>SADANA DEVENDRA</au><au>BEDELL STEPHEN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Layer transfer using boron-doped sige layer</title><date>2012-10-17</date><risdate>2012</risdate><abstract>A method for layer transfer using a boron-doped silicon germanium (SiGe) layer includes forming a boron-doped SiGe layer on a bulk silicon substrate; forming an upper silicon (Si) layer over the boron-doped SiGe layer; hydrogenating the boron-doped SiGe layer; bonding the upper Si layer to an alternate substrate; and propagating a fracture at an interface between the boron-doped SiGe layer and the bulk silicon substrate. A system for layer transfer using a boron-doped silicon germanium (SiGe) layer includes a bulk silicon substrate; a boron-doped Si Ge layer formed on the bulk silicon substrate, such that the boron-doped SiGe layer is located underneath an upper silicon (Si) layer, wherein the boron- doped SiGe layer is configured to propagate a fracture at an interface between the boron- doped SiGe layer and the bulk silicon substrate after hydrogenation of the boron-doped SiGe layer; and an alternate substrate bonded to the upper Si layer.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | chi ; eng |
| recordid | cdi_epo_espacenet_CN102741980A |
| source | esp@cenet |
| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Layer transfer using boron-doped sige layer |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-09T22%3A05%3A42IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=VICHICONTI%20JAMES&rft.date=2012-10-17&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ECN102741980A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |