Light emitting diode and manufacturing method thereof

A light emitting diode includes a substrate, an N-type semiconductor layer arranged on the substrate, an active layer, and a P-type semiconductor layer. The active layer includes a first barrier layer, a second barrier layer, and a quantum well structure layer arranged between the first and second b...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	TU BOMIN, HUANG JIAHONG, YANG SHUNGUI, HUANG SHISHENG
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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