Non-volatile memory cell and manufacturing method thereof

The invention relates to a non-volatile memory cell and a manufacturing method thereof. The non-volatile memory cell comprises a substrate, a tunneling dielectric layer, floating gates, isolation structures, inter-gate dielectric layers, control gates, a first doped region and a second doped region,...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	HAN ZONGTING, HUANG YUFENG
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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