Programming method for organic field effect transistor memory
The invention discloses a programming method for an organic field effect transistor memory. According to the programming method, light is emitted when the organic field effect transistor memory is programmed, so that the increase of the number of carriers stored in the organic field effect transisto...
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creator | LIU XIN CHEN YINGPING WANG YANHUA HAN MAIXING WANG HONG LIU MING SHANG LIWEI JI ZHUOYU |
description | The invention discloses a programming method for an organic field effect transistor memory. According to the programming method, light is emitted when the organic field effect transistor memory is programmed, so that the increase of the number of carriers stored in the organic field effect transistor memory and the boosting of on-state current of a trench are facilitated, and the memory window and on/off current ratio of the organic field effect transistor memory can be improved. |
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According to the programming method, light is emitted when the organic field effect transistor memory is programmed, so that the increase of the number of carriers stored in the organic field effect transistor memory and the boosting of on-state current of a trench are facilitated, and the memory window and on/off current ratio of the organic field effect transistor memory can be improved.</description><language>chi ; eng</language><subject>INFORMATION STORAGE ; PHYSICS ; STATIC STORES</subject><creationdate>2012</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20120919&DB=EPODOC&CC=CN&NR=102682838A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20120919&DB=EPODOC&CC=CN&NR=102682838A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LIU XIN</creatorcontrib><creatorcontrib>CHEN YINGPING</creatorcontrib><creatorcontrib>WANG YANHUA</creatorcontrib><creatorcontrib>HAN MAIXING</creatorcontrib><creatorcontrib>WANG HONG</creatorcontrib><creatorcontrib>LIU MING</creatorcontrib><creatorcontrib>SHANG LIWEI</creatorcontrib><creatorcontrib>JI ZHUOYU</creatorcontrib><title>Programming method for organic field effect transistor memory</title><description>The invention discloses a programming method for an organic field effect transistor memory. 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According to the programming method, light is emitted when the organic field effect transistor memory is programmed, so that the increase of the number of carriers stored in the organic field effect transistor memory and the boosting of on-state current of a trench are facilitated, and the memory window and on/off current ratio of the organic field effect transistor memory can be improved.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | INFORMATION STORAGE PHYSICS STATIC STORES |
title | Programming method for organic field effect transistor memory |
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