Electrically pumped optoelectronic semiconductor chip

An electrically pumped optoelectronic semiconductor chip includes at least two radiation-active quantum wells comprising InGaN or consisting thereof. The optoelectronic semiconductor chip includes at least two cover layers which include AlGaN or consist thereof. Each of the cover layers is assigned...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	MEYER TOBIAS, BIEBERSDORF ANDREAS, TAKI TETSUYA, PETER MATTHIAS, LAUBSCH ANSGAR, SABATHIL MATTHIAS, OFF JUERGEN, HERTKORN JOACHIM
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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