Production method for submicron multilayer metallic electrode

Production method for submicron multilayer metallic electrode

The invention relates to a production method for a submicron multilayer metallic electrode. The production method comprises the following steps of: 1) adopting an evaporation or sputtering technology to form a Ti-W-Ti-Au four-layer metal electroplating sub-layer; 2) photoetching an electrode pattern...

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Hauptverfasser: SUN JINCHI, LIU JUN, YANG XIAOBING, WANG CHUANMIN, YAO QUANBIN
Format: Patent
Sprache:chi ; eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator SUN JINCHI
LIU JUN
YANG XIAOBING
WANG CHUANMIN
YAO QUANBIN
description The invention relates to a production method for a submicron multilayer metallic electrode. The production method comprises the following steps of: 1) adopting an evaporation or sputtering technology to form a Ti-W-Ti-Au four-layer metal electroplating sub-layer; 2) photoetching an electrode pattern, electroplating an Au metal layer and removing photoresist after electroplating is completed; 3) adopting three steps to etch the Ti-W-Ti-Au four-layer metal electroplating sub-layer, wherein a first step is to adopt an ion beam technology which uses inert gas as main etching gas to etch away an Au layer which is at the topmost layer of the electroplating sub-layer, a second step is to adopt a plasma technology which uses F-base gas or CI-base gas as main etching gas to etch away most Ti-W-Ti metal layers, and a third step is to a plasma technology which uses CF4 gas as main etching gas to clearly etch away metal residues; and 4) annealing the etched electrode in an oxygen-free atmosphere to repair electrode etchi
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Production method for submicron multilayer metallic electrode
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