UNIFORM HIGH-K METAL GATE STACKS BY ADJUSTING THRESHOLD VOLTAGE FOR SOPHISTICATED TRANSISTORS BY DIFFUSING A METAL SPECIES PRIOR TO GATE PATTERNING

Sophisticated gate electrode structures (235 A, 235B) for N-channel transistors and P-channel transistors are patterned on the basis of substantially the same configuration while, nevertheless, the work function adjustment may be accomplished in an early manufacturing stage. For this purpose, diffus...

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Hauptverfasser:	CARTER RICHARD, REIMER BERTHOLD, GRAETSCH FALK, BINDER ROBERT, BAYAH BORIS, TRENTZSCH MARTIN, BEYER SVEN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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creator	CARTER RICHARD REIMER BERTHOLD GRAETSCH FALK BINDER ROBERT BAYAH BORIS TRENTZSCH MARTIN BEYER SVEN
description	Sophisticated gate electrode structures (235 A, 235B) for N-channel transistors and P-channel transistors are patterned on the basis of substantially the same configuration while, nevertheless, the work function adjustment may be accomplished in an early manufacturing stage. For this purpose, diffusion layer and cap layer materials are removed after incorporating the desired work function metal species into the high-k dielectric material (212) and subsequently a common gate layer stack is deposited and subsequently patterned.
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language	chi ; eng
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subjects	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
title	UNIFORM HIGH-K METAL GATE STACKS BY ADJUSTING THRESHOLD VOLTAGE FOR SOPHISTICATED TRANSISTORS BY DIFFUSING A METAL SPECIES PRIOR TO GATE PATTERNING
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