Sub-module and power semiconductor module
The submodule (22b) has a strip conductor (24) located on a part of a carrier (6), and an integrated semiconductor structure (26) applied on the conductor. The structure is connected with the conductor via flat contacts. A switched integrated ohmic resistor is integrated between two terminals (28a,...
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| Format: | Patent |
| Sprache: | chi ; eng |
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| Zusammenfassung: | The submodule (22b) has a strip conductor (24) located on a part of a carrier (6), and an integrated semiconductor structure (26) applied on the conductor. The structure is connected with the conductor via flat contacts. A switched integrated ohmic resistor is integrated between two terminals (28a, 28b). A switched integrated dual diode structure is arranged between a terminal (28c) and one of the former terminals. The diode structure extends from a bottom face as a vertical structure towards an upper face, where the bottom face turns towards the semiconductor structure. An independent claim is also included for a power semiconductor module comprising a control input. |
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