Power semiconductor structure with field effect rectifier element and making method for power semiconductor structure

The invention relates to a power semiconductor structure with a field effect rectifier element and a making method for the power semiconductor structure. The power semiconductor structure comprises a drain region, a body region, a source region, a gate channel and a diversion channel, wherein the body region is positioned above the drain region; the source region is positioned in the body region;the gate channel is positioned in the body region and adjoins a gate structure; the diversion channel is positioned in the body region, extends downwards from the source region into the drain region and adjoins a conductive structure; the conductive structure is coupled with the source region.