Silicon film formation method and silicon film formation apparatus

Silicon film formation method and silicon film formation apparatus

The invention provides a silicon film formation method and a silicon film formation apparatus. The silicon film formation method includes a first film formation operation, an etching operation, and a second film formation operation. In the first film formation operation, a first silicon film is form...

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Hauptverfasser: ARIGA JYUNJI, KAKIMOTO AKINOBU, HASEBE KAZUHIDE, KIMURA NORIFUMI, TAKAGI SATOSHI
Format: Patent
Sprache:chi ; eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator ARIGA JYUNJI
KAKIMOTO AKINOBU
HASEBE KAZUHIDE
KIMURA NORIFUMI
TAKAGI SATOSHI
description The invention provides a silicon film formation method and a silicon film formation apparatus. The silicon film formation method includes a first film formation operation, an etching operation, and a second film formation operation. In the first film formation operation, a first silicon film is formed to fill the groove of the object to be processed. In the etching operation, an opening of the groove is widened by etching the first silicon film formed in the first film formation operation. In the second film formation operation, a second silicon film is formed on the groove having the opening widened in the etching operation to fill the groove. Accordingly, a silicon film is formed on a groove of an object to be processed having the groove provided thereon.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Silicon film formation method and silicon film formation apparatus
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