Making method of doped patterns

The invention discloses a making method of doped patterns, which comprises the steps of: providing a substrate, wherein a plurality of shallow trench isolations are formed in the substrate and define and electrically isolate a plurality of active regions with same electrical property; forming a patterning light resistor on the substrate, wherein the patterning light resistor comprises a plurality of exposing regions for exposing the active regions and the shallow trench isolations among the active regions; and carrying out an ion injection process, and forming a plurality of doped patterns in the action regions through the patterning light resistor.