Method for manufacturing silicon nitride-bonded sic refractory material
The present invention provides a method for manufacturing a silicon nitride-bonded SiC refractory material having excellent thermal shock resistance. The method of manufacturing a silicon nitride-bonded SiC refractory material is characterized in having a step wherein flat particles of an SiC powder...
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creator | UCHIDA TOMIO SUDO EIICHI |
description | The present invention provides a method for manufacturing a silicon nitride-bonded SiC refractory material having excellent thermal shock resistance. The method of manufacturing a silicon nitride-bonded SiC refractory material is characterized in having a step wherein flat particles of an SiC powder, an Si powder, and at least one type selected from Al, AlN, Al oxide, Ca oxide, Mg oxide, Fe oxide, Ti oxide, and Zr oxide, are mixed together. The initial bulk density of the aforementioned SiC powder is preferably 1.40-1.55 g/cm3. |
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The method of manufacturing a silicon nitride-bonded SiC refractory material is characterized in having a step wherein flat particles of an SiC powder, an Si powder, and at least one type selected from Al, AlN, Al oxide, Ca oxide, Mg oxide, Fe oxide, Ti oxide, and Zr oxide, are mixed together. The initial bulk density of the aforementioned SiC powder is preferably 1.40-1.55 g/cm3.</description><language>chi ; eng</language><subject>ARTIFICIAL STONE ; CEMENTS ; CERAMICS ; CHEMISTRY ; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS ; CONCRETE ; LIME, MAGNESIA ; METALLURGY ; REFRACTORIES ; SLAG ; TREATMENT OF NATURAL STONE</subject><creationdate>2011</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20110720&DB=EPODOC&CC=CN&NR=102131748A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,309,781,886,25566,76549</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20110720&DB=EPODOC&CC=CN&NR=102131748A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>UCHIDA TOMIO</creatorcontrib><creatorcontrib>SUDO EIICHI</creatorcontrib><title>Method for manufacturing silicon nitride-bonded sic refractory material</title><description>The present invention provides a method for manufacturing a silicon nitride-bonded SiC refractory material having excellent thermal shock resistance. The method of manufacturing a silicon nitride-bonded SiC refractory material is characterized in having a step wherein flat particles of an SiC powder, an Si powder, and at least one type selected from Al, AlN, Al oxide, Ca oxide, Mg oxide, Fe oxide, Ti oxide, and Zr oxide, are mixed together. The initial bulk density of the aforementioned SiC powder is preferably 1.40-1.55 g/cm3.</description><subject>ARTIFICIAL STONE</subject><subject>CEMENTS</subject><subject>CERAMICS</subject><subject>CHEMISTRY</subject><subject>COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS</subject><subject>CONCRETE</subject><subject>LIME, MAGNESIA</subject><subject>METALLURGY</subject><subject>REFRACTORIES</subject><subject>SLAG</subject><subject>TREATMENT OF NATURAL STONE</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2011</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHD3TS3JyE9RSMsvUshNzCtNS0wuKS3KzEtXKM7MyUzOz1PIyywpykxJ1U3Kz0tJTQEKJysUpaYVAdXlF1UC9ZSkFmUm5vAwsKYl5hSn8kJpbgZFN9cQZw_d1IL8-NTigsTk1LzUknhnP0MDI0NjQ3MTC0djYtQAAKRjNGg</recordid><startdate>20110720</startdate><enddate>20110720</enddate><creator>UCHIDA TOMIO</creator><creator>SUDO EIICHI</creator><scope>EVB</scope></search><sort><creationdate>20110720</creationdate><title>Method for manufacturing silicon nitride-bonded sic refractory material</title><author>UCHIDA TOMIO ; SUDO EIICHI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN102131748A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2011</creationdate><topic>ARTIFICIAL STONE</topic><topic>CEMENTS</topic><topic>CERAMICS</topic><topic>CHEMISTRY</topic><topic>COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS</topic><topic>CONCRETE</topic><topic>LIME, MAGNESIA</topic><topic>METALLURGY</topic><topic>REFRACTORIES</topic><topic>SLAG</topic><topic>TREATMENT OF NATURAL STONE</topic><toplevel>online_resources</toplevel><creatorcontrib>UCHIDA TOMIO</creatorcontrib><creatorcontrib>SUDO EIICHI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>UCHIDA TOMIO</au><au>SUDO EIICHI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method for manufacturing silicon nitride-bonded sic refractory material</title><date>2011-07-20</date><risdate>2011</risdate><abstract>The present invention provides a method for manufacturing a silicon nitride-bonded SiC refractory material having excellent thermal shock resistance. The method of manufacturing a silicon nitride-bonded SiC refractory material is characterized in having a step wherein flat particles of an SiC powder, an Si powder, and at least one type selected from Al, AlN, Al oxide, Ca oxide, Mg oxide, Fe oxide, Ti oxide, and Zr oxide, are mixed together. The initial bulk density of the aforementioned SiC powder is preferably 1.40-1.55 g/cm3.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | ARTIFICIAL STONE CEMENTS CERAMICS CHEMISTRY COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS CONCRETE LIME, MAGNESIA METALLURGY REFRACTORIES SLAG TREATMENT OF NATURAL STONE |
title | Method for manufacturing silicon nitride-bonded sic refractory material |
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