Single-gate memory suitable for UHF RFID (Ultra High Frequency Radio Frequency Identification) passive tag chip

The invention discloses a single-gate nonvolatile memory suitable for a UHF RFID (Ultra High Frequency Radio Frequency Identification) passive tag chip, which mainly solves the problem that the current double-gate memory is incompatible with a CMOS (Complementary Metal Oxide Semiconductor) process....

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Hauptverfasser: ZHUANG YIQI, LI XIAOMING, LANG WEIYI, WU ZANJIN, LIU WEIFENG
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Sprache:chi ; eng
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creator ZHUANG YIQI
LI XIAOMING
LANG WEIYI
WU ZANJIN
LIU WEIFENG
description The invention discloses a single-gate nonvolatile memory suitable for a UHF RFID (Ultra High Frequency Radio Frequency Identification) passive tag chip, which mainly solves the problem that the current double-gate memory is incompatible with a CMOS (Complementary Metal Oxide Semiconductor) process. The memory consists of a plurality of completely identical memory units, each of which comprises an erasing transistor (110), a programming transistor (120), a decoding transistor (130) and a coupling transistor (140), wherein the source electrode and the drain electrode of the coupling transistor (140) are connected with a substrate to constitute a coupling terminal; the source electrode and the drain electrode of the erasing transistor (110) are connected with the substrate to constitute an erasing terminal; the source electrode of the programming transistor (120) is connected with the substrate to constitute a programming terminal; the source electrode of the decoding transistor (130) and the substrate are respe
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN102122529A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN102122529A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN102122529A3</originalsourceid><addsrcrecordid>eNqNyrEOgjAQgGEWB6O-w7npQKIYB0eDNrA4oMzkLEe5pLS1LSa8vYuDo9OfL_nnib2zUZpShZFgoMH6CcLIEZ-aoLMe6kJAJcoLbGodPULBqgfh6TWSkRNU2LL9cdmSidyxxMjWbMFhCPwmiKhA9uyWyaxDHWj17SJZi-sjL1JytqHgUJKh2OS3_S7bZ9kxO50P_zwf-bpBKA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Single-gate memory suitable for UHF RFID (Ultra High Frequency Radio Frequency Identification) passive tag chip</title><source>esp@cenet</source><creator>ZHUANG YIQI ; LI XIAOMING ; LANG WEIYI ; WU ZANJIN ; LIU WEIFENG</creator><creatorcontrib>ZHUANG YIQI ; LI XIAOMING ; LANG WEIYI ; WU ZANJIN ; LIU WEIFENG</creatorcontrib><description>The invention discloses a single-gate nonvolatile memory suitable for a UHF RFID (Ultra High Frequency Radio Frequency Identification) passive tag chip, which mainly solves the problem that the current double-gate memory is incompatible with a CMOS (Complementary Metal Oxide Semiconductor) process. The memory consists of a plurality of completely identical memory units, each of which comprises an erasing transistor (110), a programming transistor (120), a decoding transistor (130) and a coupling transistor (140), wherein the source electrode and the drain electrode of the coupling transistor (140) are connected with a substrate to constitute a coupling terminal; the source electrode and the drain electrode of the erasing transistor (110) are connected with the substrate to constitute an erasing terminal; the source electrode of the programming transistor (120) is connected with the substrate to constitute a programming terminal; the source electrode of the decoding transistor (130) and the substrate are respe</description><language>chi ; eng</language><subject>INFORMATION STORAGE ; PHYSICS ; STATIC STORES</subject><creationdate>2011</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20110713&amp;DB=EPODOC&amp;CC=CN&amp;NR=102122529A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20110713&amp;DB=EPODOC&amp;CC=CN&amp;NR=102122529A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ZHUANG YIQI</creatorcontrib><creatorcontrib>LI XIAOMING</creatorcontrib><creatorcontrib>LANG WEIYI</creatorcontrib><creatorcontrib>WU ZANJIN</creatorcontrib><creatorcontrib>LIU WEIFENG</creatorcontrib><title>Single-gate memory suitable for UHF RFID (Ultra High Frequency Radio Frequency Identification) passive tag chip</title><description>The invention discloses a single-gate nonvolatile memory suitable for a UHF RFID (Ultra High Frequency Radio Frequency Identification) passive tag chip, which mainly solves the problem that the current double-gate memory is incompatible with a CMOS (Complementary Metal Oxide Semiconductor) process. The memory consists of a plurality of completely identical memory units, each of which comprises an erasing transistor (110), a programming transistor (120), a decoding transistor (130) and a coupling transistor (140), wherein the source electrode and the drain electrode of the coupling transistor (140) are connected with a substrate to constitute a coupling terminal; the source electrode and the drain electrode of the erasing transistor (110) are connected with the substrate to constitute an erasing terminal; the source electrode of the programming transistor (120) is connected with the substrate to constitute a programming terminal; the source electrode of the decoding transistor (130) and the substrate are respe</description><subject>INFORMATION STORAGE</subject><subject>PHYSICS</subject><subject>STATIC STORES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2011</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNyrEOgjAQgGEWB6O-w7npQKIYB0eDNrA4oMzkLEe5pLS1LSa8vYuDo9OfL_nnib2zUZpShZFgoMH6CcLIEZ-aoLMe6kJAJcoLbGodPULBqgfh6TWSkRNU2LL9cdmSidyxxMjWbMFhCPwmiKhA9uyWyaxDHWj17SJZi-sjL1JytqHgUJKh2OS3_S7bZ9kxO50P_zwf-bpBKA</recordid><startdate>20110713</startdate><enddate>20110713</enddate><creator>ZHUANG YIQI</creator><creator>LI XIAOMING</creator><creator>LANG WEIYI</creator><creator>WU ZANJIN</creator><creator>LIU WEIFENG</creator><scope>EVB</scope></search><sort><creationdate>20110713</creationdate><title>Single-gate memory suitable for UHF RFID (Ultra High Frequency Radio Frequency Identification) passive tag chip</title><author>ZHUANG YIQI ; LI XIAOMING ; LANG WEIYI ; WU ZANJIN ; LIU WEIFENG</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN102122529A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2011</creationdate><topic>INFORMATION STORAGE</topic><topic>PHYSICS</topic><topic>STATIC STORES</topic><toplevel>online_resources</toplevel><creatorcontrib>ZHUANG YIQI</creatorcontrib><creatorcontrib>LI XIAOMING</creatorcontrib><creatorcontrib>LANG WEIYI</creatorcontrib><creatorcontrib>WU ZANJIN</creatorcontrib><creatorcontrib>LIU WEIFENG</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>ZHUANG YIQI</au><au>LI XIAOMING</au><au>LANG WEIYI</au><au>WU ZANJIN</au><au>LIU WEIFENG</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Single-gate memory suitable for UHF RFID (Ultra High Frequency Radio Frequency Identification) passive tag chip</title><date>2011-07-13</date><risdate>2011</risdate><abstract>The invention discloses a single-gate nonvolatile memory suitable for a UHF RFID (Ultra High Frequency Radio Frequency Identification) passive tag chip, which mainly solves the problem that the current double-gate memory is incompatible with a CMOS (Complementary Metal Oxide Semiconductor) process. The memory consists of a plurality of completely identical memory units, each of which comprises an erasing transistor (110), a programming transistor (120), a decoding transistor (130) and a coupling transistor (140), wherein the source electrode and the drain electrode of the coupling transistor (140) are connected with a substrate to constitute a coupling terminal; the source electrode and the drain electrode of the erasing transistor (110) are connected with the substrate to constitute an erasing terminal; the source electrode of the programming transistor (120) is connected with the substrate to constitute a programming terminal; the source electrode of the decoding transistor (130) and the substrate are respe</abstract><oa>free_for_read</oa></addata></record>
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STATIC STORES
title Single-gate memory suitable for UHF RFID (Ultra High Frequency Radio Frequency Identification) passive tag chip
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-09T09%3A03%3A49IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=ZHUANG%20YIQI&rft.date=2011-07-13&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ECN102122529A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true