Substrate processing method, program and computer storage medium

The present invention provides a substrate processing method, program and a computer storage medium. The supply amount of the secondary resist in double patterning is controlled to a small amount, and furthermore a preset resist pattern is formed on the substrate. Resist solution is coated on a wafer (W) which is provided with a treated film (F) (in a picture 7(b)). Afterwards, the first resist film (R1) is exposed and developed selectively thereby a first resist pattern (P1) (in a picture 7(c)). Afterwards, ether surface modifier is coated on a surface (P1a) of the first resist pattern (P1) for modifying the surface (P1a) (in a picture 7(d)). Afterwards, resist solution is coated on the wafer (W) with the first resist (P1) thereby forming a second resist film (R2) (in a picture 7(e)). Afterwards, the second resist film (R2) is exposed and developed selectively thereby forming a second resist pattern (P2) on a layer same with the first resist pattern (P1) (in a picture 7(f)).