Method for forming shallow trench isolation (STI) structure

The invention discloses a method for forming a shallow trench isolation (STI) structure. The method comprises the following steps: forming a pad oxide layer and a silicon nitride layer on a semiconductor substrate; patterning the pad oxide layer, the silicon nitride layer and the semiconductor subst...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	YIN JINGLEI, YUAN LIN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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