Manufacturing method of load bearing wafer and load bearing wafer

The invention discloses a manufacturing method of a load bearing wafer, comprising the following steps: depositing silicon nitride on the surface of wafer; defining a region to be etched on the wafer on which the silicon nitride is deposited through a photoetching technology, wherein the region to be etched is the region except a fringe region; etching the silicon nitride on the wafer to be etched; removing the residual photoresist on the wafer, and etching a silicon substrate with a designated thickness on the region to be etched; and removing the residual silicon nitride on the wafer. The invention discloses the load bearing wafer at the same time. By using the load bearing wafer, the production of the wafer can be well protected.