Formation of a hybrid integrated circuit device

Formation of a hybrid integrated circuit device

Formation of a hybrid integrated circuit device (400) is described. A design for the integrated circuit (100) is obtained and separated into at least two portions responsive to component sizes. A first die (200) is formed for a first portion of the hybrid integrated circuit device (400) using at lea...

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Bibliographische Detailangaben
Hauptverfasser: YOUNG STEVEN P, KARP JAMES, NEW BERNARD J, NANCE SCOTT S, CROTTY PATRICK J
Format: Patent
Sprache:chi ; eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
BASIC ELECTRONIC CIRCUITRY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
PULSE TECHNIQUE
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Formation of a hybrid integrated circuit device (400) is described. A design for the integrated circuit (100) is obtained and separated into at least two portions responsive to component sizes. A first die (200) is formed for a first portion of the hybrid integrated circuit device (400) using at least in part a first minimum dimension lithography. A second die (300) is formed for a second portion of the device using at least in part a second minimum dimension lithography, where the second die (300) has the second minimum dimension lithography as a smallest lithography used for the forming of the second die (300). The first die (200) and the second die (300) are attached to one another via coupling interconnects respectively thereof to provide the hybrid integrated circuit device (400).