Semiconductor device and manufacturing method thereof

On an n-semiconductor substrate (1), a trench to be a second side wall (7) is formed by cutting the substrate by means of a dicing blade having an inverted trapezoid shape. A p-diffusion layer (4) is prevented from being cut, by bringing the bottom section of the trench into contact with the p-diffu...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	TSUKAMOTO YASUHIKO, SHIMOYAMA KAZUO
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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