Method for preparing efficient photoelectronic device based on homoepitaxy
The invention discloses a method for preparing an efficient photoelectronic device based on homoepitaxy, belonging to the preparation field of photoelectronic devices and comprising the following steps: depositing an organic or inorganic medium material on a gallium nitride homogenous self-supportin...
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| creator | TAO YUEBIN YANG ZHIJIAN FANG HAO CHEN ZHIZHONG ZHANG GUOYI LI XINGBIN YU TONGJUN |
| description | The invention discloses a method for preparing an efficient photoelectronic device based on homoepitaxy, belonging to the preparation field of photoelectronic devices and comprising the following steps: depositing an organic or inorganic medium material on a gallium nitride homogenous self-supporting substrate (thick film) as an etching mask; drilling windows in the geometrical shapes on the maskby adopting methods of photoetching and etching, transferring the geometrical shapes on the mask to the homogenous self-supporting substrate (thick film) by physical, chemical and other etching methods, and ensuring a certain height different existing between a pattern area and the area protected by the mask; and molding a homoepitaxy GaN based LED or LD device structure on the substrate with well-prepared patterns thereon by a metallorganic chemical vaporous deposition, a molecular beam epitaxy or a hydride vapour phase epitaxy method. By the invention, the homogenous self-supporting substrate (thick film) GaN substr |
| format | Patent |
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| subjects | BASIC ELECTRIC ELEMENTS DEVICES USING STIMULATED EMISSION ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Method for preparing efficient photoelectronic device based on homoepitaxy |
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