Terahertz wave band vanadium oxide optical switch and preparation method thereof
The invention discloses a terahertz (THz) wave band vanadium oxide optical switch and a preparation method thereof and relates to the technical field of optical communication. The vanadium oxide optical switch is formed by the vanadium oxide film and is loaded in a THz time-domain spectrum system or...
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| creator | LIANG JIRAN CHEN TAO HU MING HOU SHUNBAO LU ZHIJUN |
| description | The invention discloses a terahertz (THz) wave band vanadium oxide optical switch and a preparation method thereof and relates to the technical field of optical communication. The vanadium oxide optical switch is formed by the vanadium oxide film and is loaded in a THz time-domain spectrum system or modem. The method comprises the following steps: using the reactive magnetic sputtering method to prepare a vanadium oxide film on the silicon substrate material; using the THz time-domain spectrum system to generate THz wave, performing laser exciation to the vanadium oxide film during the transmission of the THz wave to ensure that the THz wave can not penetrate through the vanadium oxide film and turn off the vanadium oxide optical switch; and using the THz time-domain spectrum system to generate THz wave, removing laser during the transmission of the THz wave to ensure that the THz wave penetrates through the vanadium oxide film and turn on the vanadium oxide optical switch. By adopting the optical switch and |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN101950092A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN101950092A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN101950092A3</originalsourceid><addsrcrecordid>eNqNzLEKwjAURuEsDqK-w_UBhFRx6FiK4iQO3cs1-UsDbRKSays-vQo-gNNZPs5S3Rok7pHkRTNPoDt7SxN7tu4xUng6CwpRnOGB8uzE9PQVMSFyYnHB0wjpgyX5XBC6tVp0PGRsfl2p7fnU1JcdYmiRIxt4SFtfC12UR63LfXX4x7wBwMw3oA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Terahertz wave band vanadium oxide optical switch and preparation method thereof</title><source>esp@cenet</source><creator>LIANG JIRAN ; CHEN TAO ; HU MING ; HOU SHUNBAO ; LU ZHIJUN</creator><creatorcontrib>LIANG JIRAN ; CHEN TAO ; HU MING ; HOU SHUNBAO ; LU ZHIJUN</creatorcontrib><description>The invention discloses a terahertz (THz) wave band vanadium oxide optical switch and a preparation method thereof and relates to the technical field of optical communication. The vanadium oxide optical switch is formed by the vanadium oxide film and is loaded in a THz time-domain spectrum system or modem. The method comprises the following steps: using the reactive magnetic sputtering method to prepare a vanadium oxide film on the silicon substrate material; using the THz time-domain spectrum system to generate THz wave, performing laser exciation to the vanadium oxide film during the transmission of the THz wave to ensure that the THz wave can not penetrate through the vanadium oxide film and turn off the vanadium oxide optical switch; and using the THz time-domain spectrum system to generate THz wave, removing laser during the transmission of the THz wave to ensure that the THz wave penetrates through the vanadium oxide film and turn on the vanadium oxide optical switch. By adopting the optical switch and</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRICITY ; FREQUENCY-CHANGING ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; NON-LINEAR OPTICS ; OPTICAL ANALOGUE/DIGITAL CONVERTERS ; OPTICAL LOGIC ELEMENTS ; OPTICS ; PHYSICS ; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF ; WAVEGUIDES</subject><creationdate>2011</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20110119&DB=EPODOC&CC=CN&NR=101950092A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20110119&DB=EPODOC&CC=CN&NR=101950092A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LIANG JIRAN</creatorcontrib><creatorcontrib>CHEN TAO</creatorcontrib><creatorcontrib>HU MING</creatorcontrib><creatorcontrib>HOU SHUNBAO</creatorcontrib><creatorcontrib>LU ZHIJUN</creatorcontrib><title>Terahertz wave band vanadium oxide optical switch and preparation method thereof</title><description>The invention discloses a terahertz (THz) wave band vanadium oxide optical switch and a preparation method thereof and relates to the technical field of optical communication. The vanadium oxide optical switch is formed by the vanadium oxide film and is loaded in a THz time-domain spectrum system or modem. The method comprises the following steps: using the reactive magnetic sputtering method to prepare a vanadium oxide film on the silicon substrate material; using the THz time-domain spectrum system to generate THz wave, performing laser exciation to the vanadium oxide film during the transmission of the THz wave to ensure that the THz wave can not penetrate through the vanadium oxide film and turn off the vanadium oxide optical switch; and using the THz time-domain spectrum system to generate THz wave, removing laser during the transmission of the THz wave to ensure that the THz wave penetrates through the vanadium oxide film and turn on the vanadium oxide optical switch. By adopting the optical switch and</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRICITY</subject><subject>FREQUENCY-CHANGING</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>NON-LINEAR OPTICS</subject><subject>OPTICAL ANALOGUE/DIGITAL CONVERTERS</subject><subject>OPTICAL LOGIC ELEMENTS</subject><subject>OPTICS</subject><subject>PHYSICS</subject><subject>RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><subject>TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF</subject><subject>WAVEGUIDES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2011</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNzLEKwjAURuEsDqK-w_UBhFRx6FiK4iQO3cs1-UsDbRKSays-vQo-gNNZPs5S3Rok7pHkRTNPoDt7SxN7tu4xUng6CwpRnOGB8uzE9PQVMSFyYnHB0wjpgyX5XBC6tVp0PGRsfl2p7fnU1JcdYmiRIxt4SFtfC12UR63LfXX4x7wBwMw3oA</recordid><startdate>20110119</startdate><enddate>20110119</enddate><creator>LIANG JIRAN</creator><creator>CHEN TAO</creator><creator>HU MING</creator><creator>HOU SHUNBAO</creator><creator>LU ZHIJUN</creator><scope>EVB</scope></search><sort><creationdate>20110119</creationdate><title>Terahertz wave band vanadium oxide optical switch and preparation method thereof</title><author>LIANG JIRAN ; CHEN TAO ; HU MING ; HOU SHUNBAO ; LU ZHIJUN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN101950092A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2011</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRICITY</topic><topic>FREQUENCY-CHANGING</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>NON-LINEAR OPTICS</topic><topic>OPTICAL ANALOGUE/DIGITAL CONVERTERS</topic><topic>OPTICAL LOGIC ELEMENTS</topic><topic>OPTICS</topic><topic>PHYSICS</topic><topic>RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF</topic><topic>WAVEGUIDES</topic><toplevel>online_resources</toplevel><creatorcontrib>LIANG JIRAN</creatorcontrib><creatorcontrib>CHEN TAO</creatorcontrib><creatorcontrib>HU MING</creatorcontrib><creatorcontrib>HOU SHUNBAO</creatorcontrib><creatorcontrib>LU ZHIJUN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LIANG JIRAN</au><au>CHEN TAO</au><au>HU MING</au><au>HOU SHUNBAO</au><au>LU ZHIJUN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Terahertz wave band vanadium oxide optical switch and preparation method thereof</title><date>2011-01-19</date><risdate>2011</risdate><abstract>The invention discloses a terahertz (THz) wave band vanadium oxide optical switch and a preparation method thereof and relates to the technical field of optical communication. The vanadium oxide optical switch is formed by the vanadium oxide film and is loaded in a THz time-domain spectrum system or modem. The method comprises the following steps: using the reactive magnetic sputtering method to prepare a vanadium oxide film on the silicon substrate material; using the THz time-domain spectrum system to generate THz wave, performing laser exciation to the vanadium oxide film during the transmission of the THz wave to ensure that the THz wave can not penetrate through the vanadium oxide film and turn off the vanadium oxide optical switch; and using the THz time-domain spectrum system to generate THz wave, removing laser during the transmission of the THz wave to ensure that the THz wave penetrates through the vanadium oxide film and turn on the vanadium oxide optical switch. By adopting the optical switch and</abstract><oa>free_for_read</oa></addata></record> |
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| language | chi ; eng |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRICITY FREQUENCY-CHANGING INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF WAVEGUIDES |
| title | Terahertz wave band vanadium oxide optical switch and preparation method thereof |
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