Apparatus and method for providing resist alignment marks in a double patterning lithographic process

An apparatus and a method are described for alignment of a substrate during a double patterning process. A first resist layer containing at least one alignment mark is formed on the substrate. After the first resist layer is developed, a second resist layer is deposited over the first resist layer,...

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Bibliographische Detailangaben
Hauptverfasser: DUSA MIRCEA, SEWELL HARRY, VAN HAREN RICHARD JOHANNES FRANCISCUS, VAN DER HEIJDEN ROBERTUS WILHELMUS, DOYTCHEVA MAYA ANGELOVA
Format: Patent
Sprache:chi ; eng
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