A method and apparatus for semiconductor processing
A method and apparatus for semiconductor processing is disclosed. In one embodiment, a method of transporting a wafer within a cluster tool, comprises placing the wafer into a first container of a first block device in a plurality of block devices, the first vacuum container being attached to a firs...
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| creator | PRICE J. B DULMAGE LAURENCE KELLER JED |
| description | A method and apparatus for semiconductor processing is disclosed. In one embodiment, a method of transporting a wafer within a cluster tool, comprises placing the wafer into a first container of a first block device in a plurality of block devices, the first vacuum container being attached to a first processing chamber and a factory interface. The wafer is transplanted from the first vacuum container of the first block device to a second vacuum container of a second block device in the plurality of block devices, and traversing a vertically aligned vacuum container through a vertical transportation mechanism; wherein, the second vacuum container is connected with the second processing chamber, the second block device is set vertically above or below the vacuum containers which are aligned vertically, and furthermore, the first block device and the second block device are vertically laminated along the vacuum containers which are aligned vertically. |
| format | Patent |
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In one embodiment, a method of transporting a wafer within a cluster tool, comprises placing the wafer into a first container of a first block device in a plurality of block devices, the first vacuum container being attached to a first processing chamber and a factory interface. The wafer is transplanted from the first vacuum container of the first block device to a second vacuum container of a second block device in the plurality of block devices, and traversing a vertically aligned vacuum container through a vertical transportation mechanism; wherein, the second vacuum container is connected with the second processing chamber, the second block device is set vertically above or below the vacuum containers which are aligned vertically, and furthermore, the first block device and the second block device are vertically laminated along the vacuum containers which are aligned vertically.</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 ; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE ; SEMICONDUCTOR DEVICES</subject><creationdate>2010</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20101124&DB=EPODOC&CC=CN&NR=101894778A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20101124&DB=EPODOC&CC=CN&NR=101894778A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>PRICE J. B</creatorcontrib><creatorcontrib>DULMAGE LAURENCE</creatorcontrib><creatorcontrib>KELLER JED</creatorcontrib><title>A method and apparatus for semiconductor processing</title><description>A method and apparatus for semiconductor processing is disclosed. In one embodiment, a method of transporting a wafer within a cluster tool, comprises placing the wafer into a first container of a first block device in a plurality of block devices, the first vacuum container being attached to a first processing chamber and a factory interface. The wafer is transplanted from the first vacuum container of the first block device to a second vacuum container of a second block device in the plurality of block devices, and traversing a vertically aligned vacuum container through a vertical transportation mechanism; wherein, the second vacuum container is connected with the second processing chamber, the second block device is set vertically above or below the vacuum containers which are aligned vertically, and furthermore, the first block device and the second block device are vertically laminated along the vacuum containers which are aligned vertically.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25</subject><subject>NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2010</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDB2VMhNLcnIT1FIzAPigoLEosSS0mKFtPwiheLU3Mzk_LyU0uQSIK-gKD85tbg4My-dh4E1LTGnOJUXSnMzKLq5hjh76KYW5MenFhckJqfmpZbEO_sZGhhaWJqYm1s4GhOjBgAHeSy9</recordid><startdate>20101124</startdate><enddate>20101124</enddate><creator>PRICE J. B</creator><creator>DULMAGE LAURENCE</creator><creator>KELLER JED</creator><scope>EVB</scope></search><sort><creationdate>20101124</creationdate><title>A method and apparatus for semiconductor processing</title><author>PRICE J. B ; DULMAGE LAURENCE ; KELLER JED</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN101894778A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2010</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25</topic><topic>NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>PRICE J. B</creatorcontrib><creatorcontrib>DULMAGE LAURENCE</creatorcontrib><creatorcontrib>KELLER JED</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>PRICE J. B</au><au>DULMAGE LAURENCE</au><au>KELLER JED</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>A method and apparatus for semiconductor processing</title><date>2010-11-24</date><risdate>2010</risdate><abstract>A method and apparatus for semiconductor processing is disclosed. In one embodiment, a method of transporting a wafer within a cluster tool, comprises placing the wafer into a first container of a first block device in a plurality of block devices, the first vacuum container being attached to a first processing chamber and a factory interface. The wafer is transplanted from the first vacuum container of the first block device to a second vacuum container of a second block device in the plurality of block devices, and traversing a vertically aligned vacuum container through a vertical transportation mechanism; wherein, the second vacuum container is connected with the second processing chamber, the second block device is set vertically above or below the vacuum containers which are aligned vertically, and furthermore, the first block device and the second block device are vertically laminated along the vacuum containers which are aligned vertically.</abstract><oa>free_for_read</oa></addata></record> |
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| language | chi ; eng |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE SEMICONDUCTOR DEVICES |
| title | A method and apparatus for semiconductor processing |
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