High lifetime consumable silicon nitride-silicon dioxide plasma processing components

A method of increasing mean time between cleans of a plasma etch chamber and chamber parts lifetimes is provided. Semiconductor substrates are plasma etched in the chamber while using at least one sintered silicon nitride component exposed to ion bombardment and/or ionized halogen gas. The sintered...

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Hauptverfasser: RAMANUJAM K. Y, TAYLOR TRAVIS R, MIKIJELJ BILJANA, WU SHANGHUA, KADKHODAYAN BOBBY, SRINIVASAN MUKUND
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creator RAMANUJAM K. Y
TAYLOR TRAVIS R
MIKIJELJ BILJANA
WU SHANGHUA
KADKHODAYAN BOBBY
SRINIVASAN MUKUND
description A method of increasing mean time between cleans of a plasma etch chamber and chamber parts lifetimes is provided. Semiconductor substrates are plasma etched in the chamber while using at least one sintered silicon nitride component exposed to ion bombardment and/or ionized halogen gas. The sintered silicon nitride component includes high purity silicon nitride and a sintering aid consisting of silicon dioxide. A plasma processing chamber is provided including the sintered silicon nitride component. A method of reducing metallic contamination on the surface of a silicon substrate during plasma processing is provided with a plasma processing apparatus including one or more sintered silicon nitride components. A method of manufacturing a component exposed to ion bombardment and/or plasma erosion in a plasma etch chamber, comprising shaping a powder composition consisting of high purity silicon nitride and silicon dioxide and densifying the shaped component.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN101889329A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN101889329A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN101889329A3</originalsourceid><addsrcrecordid>eNqNy7EKwjAUheEsDqK-w_UBCtYu7ShF6eSkc4ntab2Q3ITeCD6-GXR3Onxw_rW5dzw_yfGExB40BNGXtw8HUnacScJp4RHFzyOHdzZFZ9VbiksYoMoy59jHIJCkW7OarFPsvrsx-8v51nYFYuih0Q4QpL69loeyrpvq2Jyqfz4fQ-c6Kw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>High lifetime consumable silicon nitride-silicon dioxide plasma processing components</title><source>esp@cenet</source><creator>RAMANUJAM K. Y ; TAYLOR TRAVIS R ; MIKIJELJ BILJANA ; WU SHANGHUA ; KADKHODAYAN BOBBY ; SRINIVASAN MUKUND</creator><creatorcontrib>RAMANUJAM K. Y ; TAYLOR TRAVIS R ; MIKIJELJ BILJANA ; WU SHANGHUA ; KADKHODAYAN BOBBY ; SRINIVASAN MUKUND</creatorcontrib><description>A method of increasing mean time between cleans of a plasma etch chamber and chamber parts lifetimes is provided. Semiconductor substrates are plasma etched in the chamber while using at least one sintered silicon nitride component exposed to ion bombardment and/or ionized halogen gas. The sintered silicon nitride component includes high purity silicon nitride and a sintering aid consisting of silicon dioxide. A plasma processing chamber is provided including the sintered silicon nitride component. A method of reducing metallic contamination on the surface of a silicon substrate during plasma processing is provided with a plasma processing apparatus including one or more sintered silicon nitride components. A method of manufacturing a component exposed to ion bombardment and/or plasma erosion in a plasma etch chamber, comprising shaping a powder composition consisting of high purity silicon nitride and silicon dioxide and densifying the shaped component.</description><language>chi ; eng</language><subject>ARTIFICIAL STONE ; BASIC ELECTRIC ELEMENTS ; CEMENTS ; CERAMICS ; CHEMISTRY ; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS ; CONCRETE ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; LIME, MAGNESIA ; METALLURGY ; REFRACTORIES ; SEMICONDUCTOR DEVICES ; SLAG ; TREATMENT OF NATURAL STONE</subject><creationdate>2010</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20101117&amp;DB=EPODOC&amp;CC=CN&amp;NR=101889329A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20101117&amp;DB=EPODOC&amp;CC=CN&amp;NR=101889329A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>RAMANUJAM K. Y</creatorcontrib><creatorcontrib>TAYLOR TRAVIS R</creatorcontrib><creatorcontrib>MIKIJELJ BILJANA</creatorcontrib><creatorcontrib>WU SHANGHUA</creatorcontrib><creatorcontrib>KADKHODAYAN BOBBY</creatorcontrib><creatorcontrib>SRINIVASAN MUKUND</creatorcontrib><title>High lifetime consumable silicon nitride-silicon dioxide plasma processing components</title><description>A method of increasing mean time between cleans of a plasma etch chamber and chamber parts lifetimes is provided. Semiconductor substrates are plasma etched in the chamber while using at least one sintered silicon nitride component exposed to ion bombardment and/or ionized halogen gas. The sintered silicon nitride component includes high purity silicon nitride and a sintering aid consisting of silicon dioxide. A plasma processing chamber is provided including the sintered silicon nitride component. A method of reducing metallic contamination on the surface of a silicon substrate during plasma processing is provided with a plasma processing apparatus including one or more sintered silicon nitride components. A method of manufacturing a component exposed to ion bombardment and/or plasma erosion in a plasma etch chamber, comprising shaping a powder composition consisting of high purity silicon nitride and silicon dioxide and densifying the shaped component.</description><subject>ARTIFICIAL STONE</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CEMENTS</subject><subject>CERAMICS</subject><subject>CHEMISTRY</subject><subject>COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS</subject><subject>CONCRETE</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>LIME, MAGNESIA</subject><subject>METALLURGY</subject><subject>REFRACTORIES</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SLAG</subject><subject>TREATMENT OF NATURAL STONE</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2010</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNy7EKwjAUheEsDqK-w_UBCtYu7ShF6eSkc4ntab2Q3ITeCD6-GXR3Onxw_rW5dzw_yfGExB40BNGXtw8HUnacScJp4RHFzyOHdzZFZ9VbiksYoMoy59jHIJCkW7OarFPsvrsx-8v51nYFYuih0Q4QpL69loeyrpvq2Jyqfz4fQ-c6Kw</recordid><startdate>20101117</startdate><enddate>20101117</enddate><creator>RAMANUJAM K. Y</creator><creator>TAYLOR TRAVIS R</creator><creator>MIKIJELJ BILJANA</creator><creator>WU SHANGHUA</creator><creator>KADKHODAYAN BOBBY</creator><creator>SRINIVASAN MUKUND</creator><scope>EVB</scope></search><sort><creationdate>20101117</creationdate><title>High lifetime consumable silicon nitride-silicon dioxide plasma processing components</title><author>RAMANUJAM K. Y ; TAYLOR TRAVIS R ; MIKIJELJ BILJANA ; WU SHANGHUA ; KADKHODAYAN BOBBY ; SRINIVASAN MUKUND</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN101889329A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2010</creationdate><topic>ARTIFICIAL STONE</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CEMENTS</topic><topic>CERAMICS</topic><topic>CHEMISTRY</topic><topic>COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS</topic><topic>CONCRETE</topic><topic>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>LIME, MAGNESIA</topic><topic>METALLURGY</topic><topic>REFRACTORIES</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SLAG</topic><topic>TREATMENT OF NATURAL STONE</topic><toplevel>online_resources</toplevel><creatorcontrib>RAMANUJAM K. Y</creatorcontrib><creatorcontrib>TAYLOR TRAVIS R</creatorcontrib><creatorcontrib>MIKIJELJ BILJANA</creatorcontrib><creatorcontrib>WU SHANGHUA</creatorcontrib><creatorcontrib>KADKHODAYAN BOBBY</creatorcontrib><creatorcontrib>SRINIVASAN MUKUND</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>RAMANUJAM K. Y</au><au>TAYLOR TRAVIS R</au><au>MIKIJELJ BILJANA</au><au>WU SHANGHUA</au><au>KADKHODAYAN BOBBY</au><au>SRINIVASAN MUKUND</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>High lifetime consumable silicon nitride-silicon dioxide plasma processing components</title><date>2010-11-17</date><risdate>2010</risdate><abstract>A method of increasing mean time between cleans of a plasma etch chamber and chamber parts lifetimes is provided. Semiconductor substrates are plasma etched in the chamber while using at least one sintered silicon nitride component exposed to ion bombardment and/or ionized halogen gas. The sintered silicon nitride component includes high purity silicon nitride and a sintering aid consisting of silicon dioxide. A plasma processing chamber is provided including the sintered silicon nitride component. A method of reducing metallic contamination on the surface of a silicon substrate during plasma processing is provided with a plasma processing apparatus including one or more sintered silicon nitride components. A method of manufacturing a component exposed to ion bombardment and/or plasma erosion in a plasma etch chamber, comprising shaping a powder composition consisting of high purity silicon nitride and silicon dioxide and densifying the shaped component.</abstract><oa>free_for_read</oa></addata></record>
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subjects ARTIFICIAL STONE
BASIC ELECTRIC ELEMENTS
CEMENTS
CERAMICS
CHEMISTRY
COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS
CONCRETE
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
LIME, MAGNESIA
METALLURGY
REFRACTORIES
SEMICONDUCTOR DEVICES
SLAG
TREATMENT OF NATURAL STONE
title High lifetime consumable silicon nitride-silicon dioxide plasma processing components
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-11T11%3A40%3A51IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=RAMANUJAM%20K.%20Y&rft.date=2010-11-17&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ECN101889329A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true