Three-layer light cover groove MOS device and manufacture method

The invention relates to a three-layer light cover groove MOS device and a manufacture method. After the manufacture of a groove and conductive polysilicon is completed, the invention uses different opening sizes of a grid electrode groove and a grid electrode contact groove, a groove opening of the...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	WANG FAN, LIU WEI, CHENG YICHUAN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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