Methods of fabricating electronic devices using direct copper plating
The present invention relates to methods and structures for the metallization of semiconductor devices. One aspect of the present invention is a method of forming a semiconductor device having copper metallization. In one embodiment, the method includes providing a patterned wafer having a diffusion...
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creator | YOON HYUNGSUK ALEXANDER REDECKER FRITZ |
description | The present invention relates to methods and structures for the metallization of semiconductor devices. One aspect of the present invention is a method of forming a semiconductor device having copper metallization. In one embodiment, the method includes providing a patterned wafer having a diffusion barrier for copper; depositing a copperless seed layer on the diffusion barrier effective for electrochemical deposition of gapfill copper. The seed layer is formed by a conformal deposition process and by a nonconformal deposition process. The method further includes electroplating copper gapfill onto the seed layer. Another aspect of the invention includes electronic devices made using methods and structures according to embodiments of the present invention. |
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fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN101772830A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN101772830A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN101772830A3</originalsourceid><addsrcrecordid>eNrjZHD1TS3JyE8pVshPU0hLTCrKTE4sycxLV0jNSU0uKcrPy0xWSEkty0xOLVYoLQZJpGQWAWUUkvMLClKLFApywMp5GFjTEnOKU3mhNDeDoptriLOHbmpBfnxqcUFicmpeakm8s5-hgaG5uZGFsYGjMTFqAA3dM20</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Methods of fabricating electronic devices using direct copper plating</title><source>esp@cenet</source><creator>YOON HYUNGSUK ALEXANDER ; REDECKER FRITZ</creator><creatorcontrib>YOON HYUNGSUK ALEXANDER ; REDECKER FRITZ</creatorcontrib><description>The present invention relates to methods and structures for the metallization of semiconductor devices. One aspect of the present invention is a method of forming a semiconductor device having copper metallization. In one embodiment, the method includes providing a patterned wafer having a diffusion barrier for copper; depositing a copperless seed layer on the diffusion barrier effective for electrochemical deposition of gapfill copper. The seed layer is formed by a conformal deposition process and by a nonconformal deposition process. The method further includes electroplating copper gapfill onto the seed layer. Another aspect of the invention includes electronic devices made using methods and structures according to embodiments of the present invention.</description><language>chi ; eng</language><subject>APPARATUS THEREFOR ; BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; ELECTROFORMING ; ELECTROLYTIC OR ELECTROPHORETIC PROCESSES ; METALLURGY ; PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS ; SEMICONDUCTOR DEVICES</subject><creationdate>2010</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20100707&DB=EPODOC&CC=CN&NR=101772830A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76418</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20100707&DB=EPODOC&CC=CN&NR=101772830A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>YOON HYUNGSUK ALEXANDER</creatorcontrib><creatorcontrib>REDECKER FRITZ</creatorcontrib><title>Methods of fabricating electronic devices using direct copper plating</title><description>The present invention relates to methods and structures for the metallization of semiconductor devices. One aspect of the present invention is a method of forming a semiconductor device having copper metallization. In one embodiment, the method includes providing a patterned wafer having a diffusion barrier for copper; depositing a copperless seed layer on the diffusion barrier effective for electrochemical deposition of gapfill copper. The seed layer is formed by a conformal deposition process and by a nonconformal deposition process. The method further includes electroplating copper gapfill onto the seed layer. Another aspect of the invention includes electronic devices made using methods and structures according to embodiments of the present invention.</description><subject>APPARATUS THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMISTRY</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>ELECTROFORMING</subject><subject>ELECTROLYTIC OR ELECTROPHORETIC PROCESSES</subject><subject>METALLURGY</subject><subject>PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2010</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHD1TS3JyE8pVshPU0hLTCrKTE4sycxLV0jNSU0uKcrPy0xWSEkty0xOLVYoLQZJpGQWAWUUkvMLClKLFApywMp5GFjTEnOKU3mhNDeDoptriLOHbmpBfnxqcUFicmpeakm8s5-hgaG5uZGFsYGjMTFqAA3dM20</recordid><startdate>20100707</startdate><enddate>20100707</enddate><creator>YOON HYUNGSUK ALEXANDER</creator><creator>REDECKER FRITZ</creator><scope>EVB</scope></search><sort><creationdate>20100707</creationdate><title>Methods of fabricating electronic devices using direct copper plating</title><author>YOON HYUNGSUK ALEXANDER ; REDECKER FRITZ</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN101772830A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2010</creationdate><topic>APPARATUS THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMISTRY</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>ELECTROFORMING</topic><topic>ELECTROLYTIC OR ELECTROPHORETIC PROCESSES</topic><topic>METALLURGY</topic><topic>PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>YOON HYUNGSUK ALEXANDER</creatorcontrib><creatorcontrib>REDECKER FRITZ</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>YOON HYUNGSUK ALEXANDER</au><au>REDECKER FRITZ</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Methods of fabricating electronic devices using direct copper plating</title><date>2010-07-07</date><risdate>2010</risdate><abstract>The present invention relates to methods and structures for the metallization of semiconductor devices. One aspect of the present invention is a method of forming a semiconductor device having copper metallization. In one embodiment, the method includes providing a patterned wafer having a diffusion barrier for copper; depositing a copperless seed layer on the diffusion barrier effective for electrochemical deposition of gapfill copper. The seed layer is formed by a conformal deposition process and by a nonconformal deposition process. The method further includes electroplating copper gapfill onto the seed layer. Another aspect of the invention includes electronic devices made using methods and structures according to embodiments of the present invention.</abstract><oa>free_for_read</oa></addata></record> |
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language | chi ; eng |
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subjects | APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROFORMING ELECTROLYTIC OR ELECTROPHORETIC PROCESSES METALLURGY PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS SEMICONDUCTOR DEVICES |
title | Methods of fabricating electronic devices using direct copper plating |
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