Method for forming picture element structure
The invention discloses a method for forming a picture element structure, comprising the following steps of: forming a scanning line and data line segments by utilizing a first conducting layer, forming a channel structure, a first isolation structure and a second isolation structure by utilizing a...
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| creator | WU ZHOUQIN CHEN YIJUN SHI MINGHONG WAN RENWEN LIU ZHUYU |
| description | The invention discloses a method for forming a picture element structure, comprising the following steps of: forming a scanning line and data line segments by utilizing a first conducting layer, forming a channel structure, a first isolation structure and a second isolation structure by utilizing a semiconductor layer and a gate insulation layer, and forming a source electrode, a drain electrode and a common electrode by utilizing a second conducting layer. The first isolation structure and the second isolation structure can prevent the common electrode from electrically connecting to the scanning line and the data line segments and simultaneously expose partial data line segments so that the source electrode can directly contact the data line segment to form a data line. Thereby, the method can make the picture element structure with a screen positioned above the data line without utilizing a semitransparent mask or semi-color light-regulating mask and keep the low impedance of the data line. |
| format | Patent |
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The first isolation structure and the second isolation structure can prevent the common electrode from electrically connecting to the scanning line and the data line segments and simultaneously expose partial data line segments so that the source electrode can directly contact the data line segment to form a data line. Thereby, the method can make the picture element structure with a screen positioned above the data line without utilizing a semitransparent mask or semi-color light-regulating mask and keep the low impedance of the data line.</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; FREQUENCY-CHANGING ; NON-LINEAR OPTICS ; OPTICAL ANALOGUE/DIGITAL CONVERTERS ; OPTICAL LOGIC ELEMENTS ; OPTICS ; PHYSICS ; SEMICONDUCTOR DEVICES ; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF</subject><creationdate>2011</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20110720&DB=EPODOC&CC=CN&NR=101740509B$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,778,883,25547,76298</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20110720&DB=EPODOC&CC=CN&NR=101740509B$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>WU ZHOUQIN</creatorcontrib><creatorcontrib>CHEN YIJUN</creatorcontrib><creatorcontrib>SHI MINGHONG</creatorcontrib><creatorcontrib>WAN RENWEN</creatorcontrib><creatorcontrib>LIU ZHUYU</creatorcontrib><title>Method for forming picture element structure</title><description>The invention discloses a method for forming a picture element structure, comprising the following steps of: forming a scanning line and data line segments by utilizing a first conducting layer, forming a channel structure, a first isolation structure and a second isolation structure by utilizing a semiconductor layer and a gate insulation layer, and forming a source electrode, a drain electrode and a common electrode by utilizing a second conducting layer. The first isolation structure and the second isolation structure can prevent the common electrode from electrically connecting to the scanning line and the data line segments and simultaneously expose partial data line segments so that the source electrode can directly contact the data line segment to form a data line. Thereby, the method can make the picture element structure with a screen positioned above the data line without utilizing a semitransparent mask or semi-color light-regulating mask and keep the low impedance of the data line.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>FREQUENCY-CHANGING</subject><subject>NON-LINEAR OPTICS</subject><subject>OPTICAL ANALOGUE/DIGITAL CONVERTERS</subject><subject>OPTICAL LOGIC ELEMENTS</subject><subject>OPTICS</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2011</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNDxTS3JyE9RSMsvAuHczLx0hYLM5JLSolSF1JzU3NS8EoXikqJSsAgPA2taYk5xKi-U5mZQcnMNcfbQTS3Ij08tLkhMTs1LLYl39jM0MDQ3MTA1sHRyMiZKEQAHyiqi</recordid><startdate>20110720</startdate><enddate>20110720</enddate><creator>WU ZHOUQIN</creator><creator>CHEN YIJUN</creator><creator>SHI MINGHONG</creator><creator>WAN RENWEN</creator><creator>LIU ZHUYU</creator><scope>EVB</scope></search><sort><creationdate>20110720</creationdate><title>Method for forming picture element structure</title><author>WU ZHOUQIN ; CHEN YIJUN ; SHI MINGHONG ; WAN RENWEN ; LIU ZHUYU</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN101740509BB3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2011</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>FREQUENCY-CHANGING</topic><topic>NON-LINEAR OPTICS</topic><topic>OPTICAL ANALOGUE/DIGITAL CONVERTERS</topic><topic>OPTICAL LOGIC ELEMENTS</topic><topic>OPTICS</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF</topic><toplevel>online_resources</toplevel><creatorcontrib>WU ZHOUQIN</creatorcontrib><creatorcontrib>CHEN YIJUN</creatorcontrib><creatorcontrib>SHI MINGHONG</creatorcontrib><creatorcontrib>WAN RENWEN</creatorcontrib><creatorcontrib>LIU ZHUYU</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>WU ZHOUQIN</au><au>CHEN YIJUN</au><au>SHI MINGHONG</au><au>WAN RENWEN</au><au>LIU ZHUYU</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method for forming picture element structure</title><date>2011-07-20</date><risdate>2011</risdate><abstract>The invention discloses a method for forming a picture element structure, comprising the following steps of: forming a scanning line and data line segments by utilizing a first conducting layer, forming a channel structure, a first isolation structure and a second isolation structure by utilizing a semiconductor layer and a gate insulation layer, and forming a source electrode, a drain electrode and a common electrode by utilizing a second conducting layer. The first isolation structure and the second isolation structure can prevent the common electrode from electrically connecting to the scanning line and the data line segments and simultaneously expose partial data line segments so that the source electrode can directly contact the data line segment to form a data line. Thereby, the method can make the picture element structure with a screen positioned above the data line without utilizing a semitransparent mask or semi-color light-regulating mask and keep the low impedance of the data line.</abstract><oa>free_for_read</oa></addata></record> |
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| language | chi ; eng |
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| subjects | BASIC ELECTRIC ELEMENTS DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FREQUENCY-CHANGING NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS SEMICONDUCTOR DEVICES TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF |
| title | Method for forming picture element structure |
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